G
Guoqing Miao
Researcher at Chinese Academy of Sciences
Publications - 85
Citations - 1258
Guoqing Miao is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Field electron emission & Layer (electronics). The author has an hindex of 16, co-authored 81 publications receiving 1063 citations.
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Realization of a high-performance GaN UV detector by nanoplasmonic enhancement
TL;DR: Exploiting nanoplasmonic enhancement, Ag nanoparticles have been formed on theGaN surface and the responsivity of the GaN UV detector has been enhanced about 30 times compared with that without Ag nanoparticle.
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Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector
TL;DR: An asymmetric Schottky barrier metal-semiconductor-metal (MSM) ultraviolet (UV) detector with Ni/GaN/Au structure was designed and the effect of the asymmetric SBS on the detector response was investigated as discussed by the authors.
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Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors
TL;DR: In this article, the influence of threading dislocations on the properties of GaN-based metal-semiconductor-metal (MSM) ultraviolet photodetectors was investigated.
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In situ observation of two-step growth of AlN on sapphire using high-temperature metal–organic chemical vapour deposition
TL;DR: In this article, the two-step growth of AlN using high-temperature (HT) metal-organic chemical vapour deposition (MOCVD) using a 405 nm short-wavelength in situ monitoring system was studied.
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Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD
Yiren Chen,Hang Song,Dabing Li,Xiaojuan Sun,Hong Jiang,Zhiming Li,Guoqing Miao,Zhiwei Zhang,Yue Zhou +8 more
TL;DR: In this paper, the influence of the growth temperature of AlN nucleation layer (T-NL) on the AlN template grown by high-temperature metal-organic chemical vapor deposition (HT-MOCVD) was studied.