G
Guy Beaucarne
Researcher at Katholieke Universiteit Leuven
Publications - 129
Citations - 4340
Guy Beaucarne is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Silicon & Thin film. The author has an hindex of 33, co-authored 127 publications receiving 4203 citations. Previous affiliations of Guy Beaucarne include IMEC & University of New South Wales.
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Journal ArticleDOI
Study of pore reorganisation during annealing of macroporous silicon structures for solar cell application
Valerie Depauw,O. Richard,Hugo Bender,Ivan Gordon,Guy Beaucarne,Jozef Poortmans,Robert Mertens,Jean-Pierre Celis +7 more
TL;DR: In this paper, the annealing ambient composition of silicon macropores was investigated by scanning and transmission electron microscopy and by Fourier transform infrared spectroscopy, and it was found that the presence of oxygen impurities may not be as deleterious as expected, but those impurities complicate the set of reactions taking place during the high-temperature process.
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Properties of n-type polycrystalline silicon solar cells formed by aluminium induced crystallization and CVD thickening
Ö. Tüzün,Yu Qiu,A. Slaoui,Ivan Gordon,Claire Maurice,Srisaran Venkatachalam,Somenath Chatterjee,Guy Beaucarne,Jef Poortmans +8 more
TL;DR: In this paper, an n + n-type polycrystalline silicon (poly-Si) films were obtained on alumina substrates by combining the aluminium induced crystallization (AIC) process of amorphous silicon and chemical vapour deposition (LPCVD) at high temperature (1000°C) for the epitaxial thickening.
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EBSD analysis of polysilicon films formed by aluminium induced crystallization of amorphous silicon
Ö. Tüzün,J. M Auger,J. M Auger,Ivan Gordon,A. Focsa,P.C. Montgomery,Claire Maurice,A. Slaoui,Guy Beaucarne,Jef Poortmans +9 more
TL;DR: In this paper, the effect of the aluminium layer quality varying the deposition system on the grain size, the defects and the preferential crystallographic orientation of polycrystalline silicon thin films was studied.
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Influence of seed layer morphology on the epitaxial growth of polycrystalline-silicon solar cells
D. Van Gestel,Ivan Gordon,L. Carnel,K. Van Nieuwenhuysen,Jan D'Haen,Jan D'Haen,J. Irigoyen,Guy Beaucarne,Jef Poortmans +8 more
TL;DR: In this article, the authors investigated the influence of the AIC seed layer morphology (grain size and presence/absence of secondary crystallites on top of the surface) on the epitaxial growth of absorber layers and on the resulting cell parameters.