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Guy Beaucarne
Researcher at Katholieke Universiteit Leuven
Publications - 129
Citations - 4340
Guy Beaucarne is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Silicon & Thin film. The author has an hindex of 33, co-authored 127 publications receiving 4203 citations. Previous affiliations of Guy Beaucarne include IMEC & University of New South Wales.
Papers
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Journal ArticleDOI
Progress in epitaxial deposition on low-cost substrates for thin-film crystalline silicon solar cells at IMEC
TL;DR: In this paper, two CVD systems are studied: an AP-CVD commercial reactor, as a reference system, and an experimental LP CVD system for optimization of a low-cost semi-industrial process.
Patent
Photovoltaic cell with thick silicon oxide and silicon nitride passivation and fabrication method
TL;DR: In this paper, a method for the production of a photovoltaic device, for instance solar cell, is disclosed, comprising the steps of providing a substrate having a front main surface and a rear surface; depositing a dielectric layer on the rear surface, wherein the dielectrically layer stack comprises a sub-stack of dielectrics layers, the substack having a thickness larger than 100 nm, the dieectric layer stack having a width larger than 200 nm; and forming back contacts through the diecell stack.
Journal ArticleDOI
Porous silicon as an intermediate layer for thin-film solar cell
Renat Bilyalov,Lieven Stalmans,Guy Beaucarne,Roger Loo,Matty Caymax,Jef Poortmans,Johan Nijs +6 more
TL;DR: In this paper, a double-layered porous silicon (PS) with a porosity of 20 60 % allows to grow epitaxial Si film at medium temperature (725°-800°C) and at the same time serves as a gettering/diffusion barrier for impurities from potentially contaminated low-cost substrate.
Journal ArticleDOI
Amorphous Silicon, Microcrystalline Silicon, and Thin-Film Polycrystalline Silicon Solar Cells
TL;DR: The research and development on thin crystalline silicon on foreign substrates can be divided into two different routes: a low temperature route compatible with standard float glass or even plastic substrates, and a high-temperature route ( >600°C) as discussed by the authors.
Patent
Method for the formation and lift-off of porous silicon layers
TL;DR: In this paper, a method for the manufacture, formation, and removal of porous layers in a semiconductor substrate having at least a surface acting as a cathode is presented, where negative Fluorine (F − ) ions are applied between the surface of the substrate and an anode.