Device simulation of 17.3% efficient lead-free all-perovskite tandem solar cell

As a wide‐bandgap semiconductor material, titanium dioxide (TiO2), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting‐edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and low‐cost fabrication, the construction of high‐performance photodetectors (PDs) based on TiO2 nanostructures is being extensively developed. An elaborate microtopography and device configuration is the most widely used strategy to achieve efficient TiO2‐based PDs with high photoelectric performances; however, a deep understanding of all the key parameters that influence the behavior of photon‐generated carriers, is also highly required to achieve improved photoelectric performances, as well as their ultimate functional applications. Herein, an in‐depth illustration of the electrical and optical properties of TiO2 nanostructures in addition to the advances in the technological issues such as preparation, microdefects, p‐type doping, bandgap engineering, heterojunctions, and functional applications are presented. Finally, a future outlook for TiO2‐based PDs, particularly that of further functional applications is provided. This work will systematically illustrate the fundamentals of TiO2 and shed light on the preparation of more efficient TiO2 nanostructures and heterojunctions for future photoelectric applications.

Application of Nanostructured TiO2 in UV Photodetectors: A Review

Graded band-gap engineering for increased efficiency in CZTS solar cells

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Fundamentals Of Solar Cells Photovoltaic Solar Energy Conversion

In this paper, a novel ITO/Ag/ITO ( IAI ) multilayer UV photodetector was successfully prepared via RF magnetron sputtering technique to achieve the dual-benefit of improved photoresponse and outstanding visible blindness properties. The influence of the annealing process on the performance of the elaborated IAI UV photodetector was carried out. Moreover, the structural and photoelectrical properties of the sputtered tri-layered structures with and without annealing effects were also analyzed. It was found that the elaborated UV -photodetector provides near perfect UV absorbance of 96% . This achievement is attributed to the improved light trapping capability and tunable plasmonic resonance effects induced by the efficient optical coupling between free-space UV photons and Ag plasmons. It was also revealed that the heat treatment paves a new path toward preparing efficient visible-blind UV photodetectors, where the annealed sample demonstrated a superior rejection ratio of 225 as compared to that of the unannealed counterpart. Besides, electrical characterization underlined the ability of the annealed IAI UV photodetector at 500°C for offering exciting opportunities, where it exhibits a high responsivity of 3.8mA/W at self-powered condition. Therefore, by well optimizing both IAI multilayer geometry and annealing conditions, we were able to elaborate an ultrathin photodetector suitable for high-performance and flexible UV sensing applications.

High-Responsivity MSM Solar-Blind UV Photodetector Based on Annealed ITO/Ag/ITO Structure Using RF Sputtering

Improving the efficiency of a-Si:H/c-Si thin heterojunction solar cells by using both antireflection coating engineering and diffraction grating

Combined optical-electrical modeling of perovskite solar cell with an optimized design

CsPbI3 has recently received tremendous attention as a possible absorber of perovskite solar cells (PSCs). However, CsPbI3-based PSCs have yet to achieve the high performance of the hybrid PSCs. In this work, we performed a density functional theory (DFT) study using the Cambridge Serial Total Energy Package (CASTEP) code for the cubic CsPbI3 absorber to compare and evaluate its structural, electronic, and optical properties. The calculated electronic band gap (Eg) using the GGA-PBE approach of CASTEP was 1.483 eV for this CsPbI3 absorber. Moreover, the computed density of states (DOS) exhibited the dominant contribution from the Pb-5d orbital, and most charges also accumulated for the Pb atom as seen from the electronic charge density map. Fermi surface calculation showed multiband character, and optical properties were computed to investigate the optical response of CsPbI3. Furthermore, we used IGZO, SnO2, WS2, CeO2, PCBM, TiO2, ZnO, and C60 as the electron transport layers (ETLs) and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBTS, CFTS, P3HT, PEDOT:PSS, NiO, CuO, and CuI as the hole transport layers (HTLs) to identify the best HTL/CsPbI3/ETL combinations using the SCAPS-1D solar cell simulation software. Among 96 device structures, the best-optimized device structure, ITO/TiO2/CsPbI3/CBTS/Au, was identified, which exhibited an efficiency of 17.9%. The effect of the absorber and ETL thickness, series resistance, shunt resistance, and operating temperature was also evaluated for the six best devices along with their corresponding generation rate, recombination rate, capacitance–voltage, current density–voltage, and quantum efficiency characteristics. The obtained results from SCAPS-1D were also compared with wxAMPS simulation results.

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Effect of Various Electron and Hole Transport Layers on the Performance of CsPbI3-Based Perovskite Solar Cells: A Numerical Investigation in DFT, SCAPS-1D, and wxAMPS Frameworks

The temperature and carrier-trapping effects on the electrical characteristics of a 4H silicon carbide (4H-SiC) metal–oxide–semiconductor field effect transistor (MOSFET) dimensioned for a low breakdown voltage (BVDS) are investigated. Firstly, the impact of the temperature is evaluated referring to a fresh device (defects-free). In particular, the threshold voltage (Vth), channel mobility (µch), and on-state resistance (RON) are calculated in the temperature range of 300 K to 500 K starting from the device current–voltage characteristics. A defective MOSFET is then considered. A combined model of defect energy levels inside the 4H-SiC bandgap (deep and tail centers) and oxide-fixed traps is taken into account referring to literature data. The simulation results show that the SiO2/4H-SiC interface traps act to increase RON, reduce µch, and increase the sensitivity of Vth with temperature. In more detail, the deep-level traps in the mid-gap have a limited effect in determining RON once the tail traps contributions have been introduced. Also, for gate biases greater than about 2Vth (i.e., VGS > 12 V) the increase of mobile carriers in the inversion layer leads to an increased screening of traps which enhances the MOSFET output current limiting the RON increase in particular at low temperatures. Finally, a high oxide-fixed trap density meaningfully influences Vth (negative shifting) and penalizes the device drain current over the whole explored voltage range.

Temperature and SiO 2 /4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs

The electrical characteristics of a 4H silicon carbide (4H-SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) have been investigated by using a multiobjective genetic algorithm (MOGA) to overcome the existing tradeoff between main device figures of merit such as the breakdown voltage, drain current, and ON-state resistance. The aim of this work is to achieve an optimized device for a specific application. In particular, without loss of generality, we refer to a dual-implanted MOSFET (DMOSFET) dimensioned for use as a low-power transistor in direct current (DC)–DC converters for solar power optimizers. Typical blocking voltages for these transistors are around 150 V. In this investigation, both analytical and numerical models are used as objective functions in MOGA to determine a set of optimized physical and geometrical device parameters that meet the application constraints while minimizing the ON-state resistance (RON). The optimized DMOSFET exhibits an RON value of a few hundred kΩ × μm2 for different breakdown voltages in the range from 150 V to 800 V.

H. Bencherif

Papers

Improving the efficiency of a-Si:H/c-Si thin heterojunction solar cells by using both antireflection coating engineering and diffraction grating

Combined optical-electrical modeling of perovskite solar cell with an optimized design

Effect of Various Electron and Hole Transport Layers on the Performance of CsPbI3-Based Perovskite Solar Cells: A Numerical Investigation in DFT, SCAPS-1D, and wxAMPS Frameworks

Temperature and SiO 2 /4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs

Multiobjective Optimization of Design of 4H-SiC Power MOSFETs for Specific Applications