This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems. The chapters on low-noise amplifiers, oscillators and phase noise have been significantly expanded as well. The chapter on architectures now contains several examples of complete chip designs that bring together all the various theoretical and practical elements involved in producing a prototype chip. First Edition Hb (1998): 0-521-63061-4 First Edition Pb (1998); 0-521-63922-0

The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES

In selecting a mathematical model for simulating physical behaviours, it is important to reach an acceptable compromise between analytical complexity and achievable precision. With the aim of helping researchers and designers working in the area of photovoltaic systems to make a choice among the numerous diode-based models, a criterion for rating both the usability and accuracy of one-diode models is proposed in this paper. A three-level rating scale, which considers the ease of finding the data used by the analytical procedure, the simplicity of the mathematical tools needed to perform calculations and the accuracy achieved in calculating the current and power, is used. The proposed criterion is tested on some one-diode equivalent circuits whose analytical procedures, hypotheses and equations are minutely reviewed along with the operative steps to calculate the model parameters. To assess the achievable accuracy, the current-voltage (I-V) curves at constant solar irradiance and/or cell temperature obtained from the analysed models are compared to the characteristics issued by photovoltaic (PV) panel manufacturers and the differences of current and power are calculated. The results of the study highlight that, even if the five parameter equivalent circuits are suitable tools, different usability ratings and accuracies can be observed.

https://www.mdpi.com/1996-1073/9/6/427/pdf

A Criterion for Rating the Usability and Accuracy of the One-Diode Models for Photovoltaic Modules

Parameters extraction of solar cells – A comparative examination of three methods

Fractional chaotic ensemble particle swarm optimizer for identifying the single, double, and three diode photovoltaic models’ parameters

In this paper, new sensors based on a double-gate (DG) graphene nanoribbon field-effect transistor (GNRFET), for high-performance DNA and gas detection, are proposed through a simulation-based study. The proposed sensors are simulated by solving the Schrodinger equation using the mode space non-equilibrium Green’s function formalism coupled self-consistently with a 2D Poisson equation under the ballistic limits. The dielectric and work function modulation techniques are used for the electrical detection of DNA and gas molecules, respectively. The behaviors of both the sensors have been investigated, and the impacts of variation in geometrical and electrical parameters on the sensitivity of sensors have also been studied. In comparison to other FET-based sensors, the proposed sensors provide not only higher sensitivity but also better electrical and scaling performances. The obtained results make the proposed DG-GNRFET-based sensors as promising candidates for ultra-sensitive, small-size, low-power and reliable CMOS-based DNA, and gas sensors.

Double-Gate Graphene Nanoribbon Field-Effect Transistor for DNA and Gas Sensing Applications: Simulation Study and Sensitivity Analysis

In this paper, a new multiobjective genetic algorithm (MOGA)-based approach is proposed to optimize the electrical performance of double-gate (DG) MOSFETs for nanoscale CMOS digital applications. The proposed approach combines the universal optimization and fitting capability of MOGAs and the cost-effective optimization concept of quantum correction to achieve reliable and optimized designs of DG MOSFETs for nanoelectronics analog and digital circuit simulations. The dimensional and electrical parameters of the DG MOSFET (threshold voltage rolloff, off-current, drain-induced barrier lowering, subthreshold swing ( S), output conductance, and transconductance) have been ascertained, and a compact analytical expression, including quantum effects, has been presented. The developed compact models are used to formulate different objective functions, which are the prerequisite of the multiobjective optimization. The optimized design can also be incorporated into a circuit simulator to study and show the impact of our approach on a nanoscale CMOS-based circuit design.

Electrical Performance Optimization of Nanoscale Double-Gate MOSFETs Using Multiobjective Genetic Algorithms

Combined optical-electrical modeling of perovskite solar cell with an optimized design

Multi-objective genetic algorithms based approach to optimize the electrical performances of the gate stack double gate (GSDG) MOSFET

In this paper, an optimized design of (FAPbI3)1-x(MAPbBr3)x perovskite solar cell is numerically investigated using SCAPS-1D software package. A variety of potential charge transport materials are investigated. Cu2O as HTL and ZnO as ETL outperform other choices; they are therefore considered as the best candidates. The impact of the electronic properties of both ZnO/perovskite and Perovskite/Cu2O interfaces on the solar cell performance is thoroughly investigated. We discovered that appropriate values of the conduction band offset (CBO+ = 0.29) and valence band offset (VBO+ = 0.09) assure a “spike-type” band alignment at both interfaces. This choice lowers the unwanted interfacial recombination mechanism, resulting in a challenging PCE. In addition, the impact of the work function of back contact is also investigated. According to simulation findings, Ni back electrodes with a work function of 5.04 eV is appropriate for Zn0.8Mg0.2O/(FAPbI3)0.85(MAPbB3)0.15/Cu2O perovskite solar cell. The optimized FTO/MgZnO/(FAPbI3)0.85(MAPbBr3)0.15/Cu2O/Ni PSC reaches a conversion efficiency as high as 25.86%. These findings will pave the way for the design of low-cost, high-efficiency solar cells. 

Performance enhancement of (FAPbI3)1-x(MAPbBr3)x perovskite solar cell with an optimized design

The analytical modeling of nanoscale Double-Gate MOSFETs (DG) requires generally several necessary simplifying assumptions to lead to compact expressions of current-voltage characteristics for nanoscale CMOS circuits design. Further, progress in the development, design and optimization of nanoscale devices necessarily require new theory and modeling tools in order to improve the accuracy and the computational time of circuits’ simulators. In this paper, we propose a new particle swarm strategy to study the nanoscale CMOS circuits. The latter is based on the 2-D numerical Non-Equilibrium Green’s Function (NEGF) simulation and a new extended long channel DG MOSFET compact model. Good agreement between our results and numerical simulations has been found. The developed model can also be incorporated into the nano-CMOS circuits’ simulators to study CMOS-based devices without impact on the computational time and data storage.

https://journals.tubitak.gov.tr/elektrik/issues/elk-10-18-6/elk-18-6-15-0907-132.pdf

T. Bendib

Papers

Electrical Performance Optimization of Nanoscale Double-Gate MOSFETs Using Multiobjective Genetic Algorithms

Combined optical-electrical modeling of perovskite solar cell with an optimized design

Multi-objective genetic algorithms based approach to optimize the electrical performances of the gate stack double gate (GSDG) MOSFET

Performance enhancement of (FAPbI3)1-x(MAPbBr3)x perovskite solar cell with an optimized design

An approach based on particle swarm computation to study the nanoscale DG MOSFET-based circuits