Device simulation of 17.3% efficient lead-free all-perovskite tandem solar cell

As a wide‐bandgap semiconductor material, titanium dioxide (TiO2), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting‐edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and low‐cost fabrication, the construction of high‐performance photodetectors (PDs) based on TiO2 nanostructures is being extensively developed. An elaborate microtopography and device configuration is the most widely used strategy to achieve efficient TiO2‐based PDs with high photoelectric performances; however, a deep understanding of all the key parameters that influence the behavior of photon‐generated carriers, is also highly required to achieve improved photoelectric performances, as well as their ultimate functional applications. Herein, an in‐depth illustration of the electrical and optical properties of TiO2 nanostructures in addition to the advances in the technological issues such as preparation, microdefects, p‐type doping, bandgap engineering, heterojunctions, and functional applications are presented. Finally, a future outlook for TiO2‐based PDs, particularly that of further functional applications is provided. This work will systematically illustrate the fundamentals of TiO2 and shed light on the preparation of more efficient TiO2 nanostructures and heterojunctions for future photoelectric applications.

Application of Nanostructured TiO2 in UV Photodetectors: A Review

Graded band-gap engineering for increased efficiency in CZTS solar cells

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Fundamentals Of Solar Cells Photovoltaic Solar Energy Conversion

In this paper, a novel ITO/Ag/ITO ( IAI ) multilayer UV photodetector was successfully prepared via RF magnetron sputtering technique to achieve the dual-benefit of improved photoresponse and outstanding visible blindness properties. The influence of the annealing process on the performance of the elaborated IAI UV photodetector was carried out. Moreover, the structural and photoelectrical properties of the sputtered tri-layered structures with and without annealing effects were also analyzed. It was found that the elaborated UV -photodetector provides near perfect UV absorbance of 96% . This achievement is attributed to the improved light trapping capability and tunable plasmonic resonance effects induced by the efficient optical coupling between free-space UV photons and Ag plasmons. It was also revealed that the heat treatment paves a new path toward preparing efficient visible-blind UV photodetectors, where the annealed sample demonstrated a superior rejection ratio of 225 as compared to that of the unannealed counterpart. Besides, electrical characterization underlined the ability of the annealed IAI UV photodetector at 500°C for offering exciting opportunities, where it exhibits a high responsivity of 3.8mA/W at self-powered condition. Therefore, by well optimizing both IAI multilayer geometry and annealing conditions, we were able to elaborate an ultrathin photodetector suitable for high-performance and flexible UV sensing applications.

High-Responsivity MSM Solar-Blind UV Photodetector Based on Annealed ITO/Ag/ITO Structure Using RF Sputtering

In this paper, we performed a Pseudo-morphic High Electron Mobility Transistors (pHEMT) In0.3Al0.7As/InAs/InSb/In0.3Al0.7 using Silvaco-TCAD. RF and analog electrical characteristics are assessed under high temperature effect. The impact of the temperature is evaluated referring to a device at room temperature. In particular, the threshold voltage (Vth), transconductance (gm), and Ion/Ioff ratio are calculated in the temperature range of 300 K to 700 K. The primary device exhibits a drain current of 950 mA, a threshold voltage of −1.75 V, a high value of transconductance gm of 650 mS/mm, Ion/Ioff ratio of 1 × 106, a transition frequency (ft) of 790 GHz, and a maximum frequency (fmax) of 1.4 THZ. The achieved results show that increasing temperature act to decrease current, reduce gm, and Ion/Ioff ratio. In more detail high temperature causes a phonon scattering mechanism happening that determine in turn a reduced drain current and shift positively the threshold voltage resulting in hindering the device DC/AC capability.

RF/analog Performance Assessment of High Frequency, Low Power In0.3Al0.7As/InAs/InSb/In0.3Al0.7As HEMT Under High Temperature Effect

In this paper, the role of different high-k materials in enhancing the efficiency of a metal insulator semiconductor (MIS) solar cell is investigated in detail. In order to overcome the traditional SiO2 disadvantages, alternative dielectrics, namely TiO2, Si3N4, and Ta2O5, with a thickness of 10 A are used. Furthermore, the effect of the interface states density, doping density, and oxide fixed charge on the electrical outputs of the proposed MIS solar cell is assessed. The simulation results indicate that Ta2O5 could be a good candidate to replace SiO2. The optimized design of a 250-μm-thick cell structure, with a p-type substrate with a doping density of 7 × 1015 cm−3 and a Ta2O5layeras dielectric, performs a short circuit currentdensity JSC = 44.35 mA/cm2, an open circuit voltage VOC = 0.59 V,a fill factor FF = 81.19%, and a conversion efficiency η = 21.54%. Besides, to get a broad perspective on the device optimization possibility, an investigation on a suitable metal work function is also carried out in this study. In particular, a metal electrode with a low work function could efficiently improve the device VOC value.

An Enhanced Conversion Efficiency of Metal Insulator Semiconductor Solar Cells by Using Different High-K Dielectrics

CsSnI3 is considered to be a viable alternative to lead (Pb)-based perovskite solar cells (PSCs) due to its suitable optoelectronic properties. The photovoltaic (PV) potential of CsSnI3 has not yet been fully explored due to its inherent difficulties in realizing defect-free device construction owing to the nonoptimized alignment of the electron transport layer (ETL), hole transport layer (HTL), efficient device architecture, and stability issues. In this work, initially, the structural, optical, and electronic properties of the CsSnI3 perovskite absorber layer were evaluated using the CASTEP program within the framework of the density functional theory (DFT) approach. The band structure analysis revealed that CsSnI3 is a direct band gap semiconductor with a band gap of 0.95 eV, whose band edges are dominated by Sn 5s/5p electrons After performing the DFT analysis, we investigated the PV performance of a variety of CsSnI3-based solar cell configurations utilizing a one-dimensional solar cell capacitance simulator (SCAPS-1D) with different competent ETLs such as IGZO, WS2, CeO2, TiO2, ZnO, PCBM, and C60. Simulation results revealed that the device architecture comprising ITO/ETL/CsSnI3/CuI/Au exhibited better photoconversion efficiency among more than 70 different configurations. The effect of the variation in the absorber, ETL, and HTL thickness on PV performance was analyzed for the above-mentioned configuration thoroughly. Additionally, the impact of series and shunt resistance, operating temperature, capacitance, Mott–Schottky, generation, and recombination rate on the six superior configurations were evaluated. The J–V characteristics and the quantum efficiency plots for these devices are systematically investigated for in-depth analysis. Consequently, this extensive simulation with validation results established the true potential of CsSnI3 absorber with suitable ETLs including ZnO, IGZO, WS2, PCBM, CeO2, and C60 ETLs and CuI as HTL, paving a constructive research path for the photovoltaic industry to fabricate cost-effective, high-efficiency, and nontoxic CsSnI3 PSCs.

https://pubs.acs.org/doi/pdf/10.1021/acsomega.3c00306

Deep Insights into the Coupled Optoelectronic and Photovoltaic Analysis of Lead-Free CsSnI3 Perovskite-Based Solar Cell Using DFT Calculations and SCAPS-1D Simulations

Perovskite solar cells (PSCs) have become a possible alternative to traditional photovoltaic devices for their high performance, low cost, and ease of fabrication. Here in this study, the SCAPS-1D simulator numerically simulates and optimizes CsPbBr3-based PSCs under the optimum illumination situation. We explore the impact of different back metal contacts (BMCs), including Cu, Ag, Fe, C, Au, W, Pt, Se, Ni, and Pd combined with the TiO2 electron transport layer (ETL) and CFTS hole transport layer (HTL), on the performance of the devices. After optimization, the ITO/TiO2/CsPbBr3/CFTS/Ni structure showed a maximum power conversion efficiency (PCE or η) of 13.86%, with Ni as a more cost-effective alternative to Au. After the optimization of the BMC the rest of the investigation is conducted both with and without HTL mode. We investigate the impact of changing the thickness and the comparison with acceptor and defect densities (with and without HTL) of the CsPbBr3 perovskite absorber layer on the PSC performance. Finally, we optimized the thickness, charge carrier densities, and defect densities of the absorber, ETL, and HTL, along with the interfacial defect densities at HTL/absorber and absorber/ETL interfaces to improve the PCE of the device; and the effect of variation of these parameters is also investigated both with and without HTL connected. The final optimized configuration achieved a VOC of 0.87 V, JSC of 27.57 mA cm−2, FF of 85.93%, and PCE of 20.73%. To further investigate the performance of the optimized device, we explore the impact of the temperature, shunt resistance, series resistance, capacitance, generation rate, recombination rate, Mott–Schottky, JV, and QE features of both with and without HTL connected. The optimized device offers the best thermal stability at a temperature of 300 K. Our study highlights the potential of CsPbBr3-based PSCs and provides valuable insights for their optimization and future development.

H. Bencherif

Papers

RF/analog Performance Assessment of High Frequency, Low Power In0.3Al0.7As/InAs/InSb/In0.3Al0.7As HEMT Under High Temperature Effect

An Enhanced Conversion Efficiency of Metal Insulator Semiconductor Solar Cells by Using Different High-K Dielectrics

Deep Insights into the Coupled Optoelectronic and Photovoltaic Analysis of Lead-Free CsSnI3 Perovskite-Based Solar Cell Using DFT Calculations and SCAPS-1D Simulations

Harnessing the potential of CsPbBr3-based perovskite solar cells using efficient charge transport materials and global optimization

An improved perovskite solar cell employing In_xGa_1-xAs as an efficient hole transport layer