Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

/pdf/spintronics-fundamentals-and-applications-2dx38n6phu.pdf

Spintronics: Fundamentals and applications

In the light of the tremendous progress that has been made in raising the transition temperature of the copper oxide superconductors (for a review, see ref. 1), it is natural to wonder how high the transition temperature, Tc, can be pushed in other classes of materials. At present, the highest reported values of Tc for non-copper-oxide bulk superconductivity are 33 K in electron-doped CsxRbyC60 (ref. 2), and 30 K in Ba1-xKxBiO3 (ref. 3). (Hole-doped C60 was recently found4 to be superconducting with a Tc as high as 52 K, although the nature of the experiment meant that the supercurrents were confined to the surface of the C60 crystal, rather than probing the bulk.) Here we report the discovery of bulk superconductivity in magnesium diboride, MgB2. Magnetization and resistivity measurements establish a transition temperature of 39 K, which we believe to be the highest yet determined for a non-copper-oxide bulk superconductor.

Superconductivity at 39 K in magnesium diboride

Quantum networks provide opportunities and challenges across a range of intellectual and technical frontiers, including quantum computation, communication and metrology. The realization of quantum networks composed of many nodes and channels requires new scientific capabilities for generating and characterizing quantum coherence and entanglement. Fundamental to this endeavour are quantum interconnects, which convert quantum states from one physical system to those of another in a reversible manner. Such quantum connectivity in networks can be achieved by the optical interactions of single photons and atoms, allowing the distribution of entanglement across the network and the teleportation of quantum states between nodes.

The quantum internet

Microcavity physics and design will be reviewed. Following an overview of applications in quantum optics, communications and biosensing, recent advances in ultra-high-Q research will be presented.

Optical microcavities

This paper gives the 2010 self-consistent set of values of the basic constants and conversion factors of physics and chemistry recommended by the Committee on Data for Science and Technology (CODATA) for international use. The 2010 adjustment takes into account the data considered in the 2006 adjustment as well as the data that became available from 1 January 2007, after the closing date of that adjustment, until 31 December 2010, the closing date of the new adjustment. Further, it describes in detail the adjustment of the values of the constants, including the selection of the final set of input data based on the results of least-squares analyses. The 2010 set replaces the previously recommended 2006 CODATA set and may also be found on the World Wide Web at physics.nist.gov/constants.

/pdf/codata-recommended-values-of-the-fundamental-physical-4bsdant71c.pdf

CODATA Recommended Values of the Fundamental Physical Constants: 2006

Cavity quantum electrodynamics (QED) systems allow the study of a variety of fundamental quantum-optics phenomena, such as entanglement, quantum decoherence and the quantum–classical boundary. Such systems also provide test beds for quantum information science. Nearly all strongly coupled cavity QED experiments have used a single atom in a high-quality-factor (high-Q) cavity. Here we report the experimental realization of a strongly coupled system in the solid state: a single quantum dot embedded in the spacer of a nanocavity, showing vacuum-field Rabi splitting exceeding the decoherence linewidths of both the nanocavity and the quantum dot. This requires a small-volume cavity and an atomic-like two-level system. The photonic crystal slab nanocavity—which traps photons when a defect is introduced inside the two-dimensional photonic bandgap by leaving out one or more holes—has both high Q and small modal volume V, as required for strong light–matter interactions. The quantum dot has two discrete energy levels with a transition dipole moment much larger than that of an atom, and it is fixed in the nanocavity during growth.

Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity

The recent development of techniques to produce optical semiconductor cavities of very high quality has prepared the stage for observing cavity quantum-electrodynamic effects in solid-state materials. Among the most promising systems for these studies are semiconductor quantum dots inside photonic crystal, micropillar or microdisk resonators. We review the progress so far in obtaining true quantum-optical strong-coupling effects in semiconductors. We discuss the recent results on vacuum Rabi splitting with a single quantum dot, emphasizing the differences from quantum-well systems. Finally, we propose nonlinear tests for the true quantum limit and speculate about applications in quantum information devices.

Vacuum Rabi splitting in semiconductors

The authors review the nonlinear optical properties of semiconductor quantum wells that are grown inside high-Q Bragg-mirror microcavities. Light-matter coupling in this system is particularly pronounced, leading in the linear regime to a polaritonic mixing of the excitonic quantum well resonance and the single longitudinal cavity mode. The resulting normal-mode splitting of the optical resonance is observed in reflection, transmission, and luminescence experiments. In the nonlinear regime the strong light-matter coupling influences the excitation-dependent bleaching of the normal-mode resonances for nonresonant excitation, leads to transient saturation and normal-mode oscillations for resonant pulsed excitation and is responsible for the density-dependent signatures in the luminescence characteristics. These and many more experimental observations are summarized and explained in this review using a microscopic theory for the Coulomb interacting electron-hole system in the quantum well that is nonperturbatively coupled to the cavity light field.

Nonlinear optics of normal-mode-coupling semiconductor microcavities

/pdf/erratum-polariton-dispersion-of-periodic-quantum-well-3lvd5nno9e.pdf

Erratum: Polariton dispersion of periodic quantum well structures (Pis’ma Zh. Éksp. Teor. Fiz. 76, 739 (2002) [JETP Lett. 76, 637 (2002)])

Optical bistability has been observed in a semiconductor for the first time. The bistable etalon consists of a GaAlAs‐GaAs‐GaAlAs molecular‐beam‐epitaxially‐grown sandwich with 90% reflectivity coatings. The bistability is primarily dispersive with the nonlinear refractive index arising from light‐induced changes in exciton absorption. Using light of frequency just below the exciton peak, we observed bistability from 5 to 120 °K with 40‐ns turn‐off and subnanosecond turn‐on times with 1 mW/μm2 holding intensity.

H. M. Gibbs

Papers

Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity

Vacuum Rabi splitting in semiconductors

Nonlinear optics of normal-mode-coupling semiconductor microcavities

Erratum: Polariton dispersion of periodic quantum well structures (Pis’ma Zh. Éksp. Teor. Fiz. 76, 739 (2002) [JETP Lett. 76, 637 (2002)])

Optical bistability in semiconductors