H
H. P. Maruska
Researcher at University of South Carolina
Publications - 16
Citations - 1075
H. P. Maruska is an academic researcher from University of South Carolina. The author has contributed to research in topics: Epitaxy & Light-emitting diode. The author has an hindex of 11, co-authored 16 publications receiving 1023 citations.
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Journal ArticleDOI
III-Nitride UV Devices
TL;DR: The need for efficient, compact and robust solid-state UV optical sources and sensors had stimulated the development of optical devices based on III-nitride material system as mentioned in this paper, which enabled rapid progress in material growth, device fabrication and packaging enabled demonstration of high efficiency visible-blind and solar-blind photodetectors, deep-UV light-emitting diodes with emission from 400 to 250 nm.
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250nmAlGaN light-emitting diodes
TL;DR: In this paper, the authors measured a peak power of 0.57mW at 1000mA of pulsed pump current for an unpackaged 200×200μm square geometry LED emitting at 255nm.
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Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells
E. Kuokstis,C. Q. Chen,M. Gaevski,Wenhong Sun,J. W. Yang,Grigory Simin,M. Asif Khan,H. P. Maruska,D. W. Hill,M. C. Chou,J. J. Gallagher,Bruce H. T. Chai +11 more
TL;DR: In this article, the polarization effects in GaN/AlGaN multiple quantum wells (MQWs) with different c-axis orientation by means of excitation-dependent photoluminescence (PL) analysis were studied.
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High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design
Vinod Adivarahan,Shufan Wu,Wenhong Sun,V. Mandavilli,Maxim S. Shatalov,Grigory Simin,J. W. Yang,H. P. Maruska,M. Asif Khan +8 more
TL;DR: In this paper, a micro-pixel-based light-emitting diodes (LEDs) with peak emission wavelength at 280nm was proposed to solve the lateral current crowding problem.
Journal ArticleDOI
GaN Homoepitaxy on Freestanding (11̄00) Oriented GaN Substrates
C. Q. Chen,M. Gaevski,Wenhong Sun,E. Kuokstis,J. P. Zhang,R. S. Q. Fareed,Hong Wang,J. W. Yang,Grigory Simin,M.A. Khan,H. P. Maruska,D. W. Hill,Mitch M. C. Chou,Bruce H. T. Chai +13 more
TL;DR: In this article, homoepitaxial GaN growth on freestanding (1100) oriented (M-plane GaN) substrates using low-pressure metalorganic chemical vapor deposition was reported.