Showing papers in "Solid State Communications in 1974"

TL;DR: In this paper, an (oxygen)- vacancy model of the E1-center in alpha quartz, featuring an asymmetric relaxation of the two silicons adjacent to the oxygen vacancy, is presented and analyzed.

TL;DR: In this article, a semi-empirical method for calculating the room temperature refractive index of Ga 1− x Al x As at energies below the direct band edge is presented.

TL;DR: Sputtered films of nominal composition Nb 3 Ge deposited onto hot substrates, of the type recently found by Gavaler to have superconductivity onsets at 22.3° K, have now been obtained with a maximum onset temperature of 23.2 ± 0.2° K and a transition width of ∼ 1.5° K as mentioned in this paper.

TL;DR: In this paper, the second order Raman spectra of a layer compound MoS2 have been measured and features characteristic of a two-dimensional phonon density of states curve have been observed.

TL;DR: In this paper, the primary 29 Si hyperfine structure of E centers in γ-irradiated glassy silica has been observed and analyzed by computer line shape simulation methods.

TL;DR: In this paper, the nuclear spin-lattice relaxation rates of weakly ferro- and antiferromagnetic metals were studied by using the renormalized spin fluctuation theory.

TL;DR: In this paper, molecular orbitals for the highest occupied states of TTF + and TCNQ −, calculated by the Extended Huckel Method of Hoffman, are used to compute band parameters within the tight-binding approximation for the conduction band of solid TTFTCNQ.

TL;DR: In this article, a minimum value for the band gap of 6.4 ± 0.5 eV was obtained from soft X-ray spectra of cubic boron nitride crystals.

TL;DR: In this paper, it was shown that the two phases coexist between 0.49 and 0.64 in the solid PZT solution and the leverage law is obeyed.

TL;DR: In this paper, it was shown that the critical properties of the two systems are the same, and therefore the phase transition from smectic A to nematic will always be at least weakly first order.

TL;DR: In this article, a second order antiferrodistortive tetragonal to monoclinic phase transition at 97.7°C was found for 3,4-dihydroxy-3-cyclobutene-1,2-dione.

TL;DR: In this article, the magneto-stark effect and electronic transport properties on GaSe have been studied and it has been shown that GaSe has nearly isotropic electronic states at the forbidden gap and the valence band anisotropy is anomalous.

TL;DR: In this article, the results of Mossbauer measurements on disordered b.c. and Fe-Co alloys are presented and it is shown that in these alloys the frequently used phenomenological expression H Fe = a μ Fe + b μ gives a very poor description because of the tendency of short-range ordering.

TL;DR: In this article, the temperature dependence of the spectrum of two trapped hole centers introduced by electron irradiation in ZnO was investigated and the results established the identification of these centers as being two slightly inequivalent configurations of the zinc vacancy in its negative charge state.

TL;DR: In this paper, the positron diffusion constant, mobility and other diffusion related quantities in simple metals were investigated and the mobility was found to be largely limited by positron-phonon interaction which is treated in the deformation potential model.

TL;DR: The anomalous apparent conductivities can be explained in terms of the strong temperature dependence of the electrical anisotropy which is found, through measurements on several samples, to peak near 70 K.

TL;DR: In a variety of amorphous materials, the far infrared and microwave absorption (3-3000 GHz or 0.1-100 cm−1) is orders of magnitude greater than that observed in corresponding crystalline materials as mentioned in this paper.

TL;DR: In this article, the pyrochlore structure of Cd 2 Os 2 O 7 (Cd2O 7) has been shown to have a cubic cell edge of 10.17 A at room temperature.

TL;DR: In this paper, it was shown that the major contribution to the high uniaxial anisotropy of the compound SmCo5 arises from the action of crystalline and exchange fields on the Sm3+ ion.

TL;DR: By neutron elastic and quasi-elastic scattering from K2CoF4, sublattice magnetization and spin correlations were examined quantitatively as mentioned in this paper, and the obtained critical exponents β, ν, γ, and η coincide precisely with those from Onsager's exact solution for the two-dimensional Ising model.

TL;DR: In this article, optical birefringence, X-ray and neutron diffraction methods with single crystals were used to study the structural phase transitions of the perowskite-type layer structures of (CH3NH3)2MeCl4 with Me=Mn, Fe.

TL;DR: The Raman Spectra of carbon-deficient sputtered amorphous SiC films contain an intense band centered at 1442 cm−1 as discussed by the authors, attributed to the presence of C-C bonds.

TL;DR: In this article, the low temperature specific heat of cubic U X 3 intermetallic compounds with X = Al, Ga, In, Si, Ge and Sn have been measured, ranging from 14 to 169 mJ/mol K 2.

TL;DR: The superconducting transition temperature of tetragonal I sodium tungsten bronze (NaxWO3) has been found to increase rapidly as the x-value is decreased to the metal-semiconductor phase transition as mentioned in this paper.

TL;DR: In this article, a single crystal of pure chromium below the Neel point was observed by X-ray diffraction at positions apart by 2 δ from the Bragg points, and it was shown that the lattice spacing in the direction of the wave vector of the spin density wave are modulated periodically and the period is a half of that of the SDW.

TL;DR: In this paper, pulse superposition measurements of ultrasonic wave velocities have been made in indium-thallium alloys containing 25 and 27 at.c.t. % thallium.

TL;DR: In this paper, the authors used differential Raman spectroscopy to detect impurity modes in KTaO3 doped with Na and Li ions, and showed that the Na ions do not occupy center of inversion positions.

TL;DR: Very accurate experimental measurements on silicon are used to calculate the valence density and the bonding deformation density in the silicon crystal as mentioned in this paper, which shows good agreement for the height, but an appreciable discrepancy for the shape of the bond maximum.

TL;DR: In this article, it was suggested that conduction in localized states at the band edge of an amorphous semiconductor occurs by variable-range hopping, and that the hopping length is typically ten times larger than the average interatomic separation and increases with decreasing temperature.

TL;DR: In this paper, an anomalous dependence of dielectric constant ϵ l r and dissipation factor tg δ on frequency and temperature of copper containing ferrites is discussed.