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Ha Quoc Thang Bui
Researcher at New Jersey Institute of Technology
Publications - 17
Citations - 256
Ha Quoc Thang Bui is an academic researcher from New Jersey Institute of Technology. The author has contributed to research in topics: Light-emitting diode & Nanowire. The author has an hindex of 5, co-authored 17 publications receiving 98 citations. Previous affiliations of Ha Quoc Thang Bui include Vietnam Academy of Science and Technology.
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Journal ArticleDOI
The dawn of Ga2O3 HEMTs for high power electronics - A review
Rajan Singh,Trupti Ranjan Lenka,Deepak Kumar Panda,Ravi Teja Velpula,Barsha Jain,Ha Quoc Thang Bui,Hieu Pham Trung Nguyen +6 more
TL;DR: In this article, a perspective of Ga2O3 material towards making high electron mobility transistors (HEMTs) for a certain class of RF applications is given, where various defects in WBG devices and their effects on the reliability aspects are also addressed.
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Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays.
Ha Quoc Thang Bui,Ravi Teja Velpula,Barsha Jain,Omar Hamed Aref,Hoang Duy Nguyen,Trupti Ranjan Lenka,Hieu Pham Trung Nguyen +6 more
TL;DR: Full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy demonstrate strong and highly stable white-light emission with high color rendering index.
Journal ArticleDOI
High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes.
Barsha Jain,Ravi Teja Velpula,Ha Quoc Thang Bui,Hoang Duy Nguyen,Trupti Ranjan Lenka,Truong Khang Nguyen,Hieu Pham Trung Nguyen +6 more
TL;DR: A blue-emitting InGaN quantum well is incorporated between the quantum dot active region and the p-GaN, wherein electrons escaping from the device active region can recombine with holes and contribute to white-light emission.
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Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure
Ravi Teja Velpula,Barsha Jain,Ha Quoc Thang Bui,Fatemeh Mohammadi Shakiba,Jeffrey Jude,Moses Tumuna,Hoang Duy Nguyen,Trupti Ranjan Lenka,Hieu Pham Trung Nguyen +8 more
TL;DR: It is demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier could generate enough conduction band barrier height for the effectively reduced electron overflow into the p-GaN region.