A 3D-printed, alternatively tilt-polarized PVDF-TrFE polymer with enhanced piezoelectric effect for self-powered sensor application

2D transition metal dichalcogenide MoS2 monolayer quantum dots (MoS2-QD) and their doped boron (B@MoS2-QD), nitrogen (N@MoS2-QD), phosphorus (P@MoS2-QD), and silicon (Si@MoS2-QD) surfaces have been theoretically investigated using density functional theory (DFT) computation to understand their mechanistic sensing ability, such as conductivity, selectivity, and sensitivity toward NH3 gas. The results from electronic properties showed that P@MoS2-QD had the lowest energy gap, which indicated an increase in electrical conductivity and better adsorption behavior. By carrying out comparative adsorption studies using m062-X, ωB97XD, B3LYP, and PBE0 methods at the 6-311G++(d,p) level of theory, the most negative values were observed from ωB97XD for the P@MoS2-QD surface, signifying the preferred chemisorption surface for NH3 detection. The mechanistic studies provided in this study also indicate that the P@MoS2-QD dopant is a promising sensing material for monitoring ammonia gas in the real world. We hope this research work will provide informative knowledge for experimental researchers to realize the potential of MoS2 dopants, specifically the P@MoS2-QD surface, as a promising candidate for sensors to detect gas.

Heteroatoms (Si, B, N, and P) doped 2D monolayer MoS2 for NH3 gas detection

Growth of bulk β-Ga2O3 single crystals by the Czochralski method

Different variants of novel coronavirus disease are spreading and emerging rapidly all over the world causing a health pandemic. With this sudden outbreak, ultraviolet-C (UV-C) sterilizing devices are being significantly...

Current Advances in Solar-blind Photodetection Technology: Using Ga2O3 & AlGaN

In the recent times, the performance of MOSFET in the nanoscaled region attains improvisations through several alternative device structures. Amongst many advanced MOSFET structures, the Double Gate (DG) MOSFET is one such structure which mitigates short channel effects because of its excellent scalability. Among the various structures, FET- based biosensors have shown an accelerated growth recently. Even though many analytical models are available for the Dual Material DG (DMDG) MOSFET structures, this work endeavours to introduce an analytical modeling of nanocavity embedded DMDG structure for the first time. The expression for surface potential is obtained by solving the 2-D Poisson’s equation using a parabolic-potential approach. The threshold voltage is determined from the minimum surface potential model. Sensitivity is computed in terms of relative change in the threshold voltage and it is derived using the model. The influence of various device geometrical parameters like length and thickness of the nanocavity on the sensitivity has been investigated. Further, a comparison of the sensitivity of DG MOSFET and DMDG MOSFET has also been made and the derived results are validated against TCAD simulation results.

2D analytical modeling and simulation of dual material DG MOSFET for biosensing application

The dawn of Ga2O3 HEMTs for high power electronics - A review

Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET

An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre, in order to predict device characteristics such as threshold voltage, drain current and gate capacitance. The drain current model incorporates important physical effects such as velocity saturation, short channel effects like DIBL (drain induced barrier lowering), channel length modulation (CLM), and mobility degradation due to self-heating. The predicted I d - V ds , I d - V gs , and C - V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the model. The developed model was then utilized to design and simulate a single-pole single-throw (SPST) RF switch.

http://iopscience.iop.org/article/10.1088/1674-4926/38/6/064002/pdf

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

In this paper, a dielectric modulated dual material gate TFET (DM-DMG_TFET)based biosensor is proposed. In order to detect various biomolecules, a nanogap cavity is formed by the overlapping the gate on the drain side. The change in ambipolar current is considered as the sensing parameter by changing the dielectric constants of various immobilized biomolecule inside the nano cavity. A complete investigation on the performance of the biosensor is also done by considering different positions and filling factor of the biomolecules inside the nano cavity region. The dual-material gate structure is considered with dissimilar work functions (фM1 < фM2), which can effectively reduce the ambipolar current by enhancing the barrier width at channel-Drain junction. The proposed structure deliberately reduces ambipolar current and increases the sensitivity as compared to the single material gate structure. In this work we report a drift in the sensitivity from 104 to 106 for low dielectric constant biomolecules.

Simulation Study of Dielectric Modulated Dual Material Gate TFET Based Biosensor by Considering Ambipolar Conduction

This article presents an accurate and efficient extraction procedure for microwave frequency small-signal equivalent circuit parameters of AlInN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT). The parameter extraction technique is based on the combination of conventional and optimization methods using the computer-aided modeling approach. The S-, Y-, and Z- parameters of the model are extracted from extensive dynamic AC simulation of the proposed device. From the extracted Y- and Z- parameters the pad capacitances, parasitic inductances and resistances are extracted by operating the device at low and high frequency pinch-off condition depending upon requirement. Then, the intrinsic elements are extracted quasi analytically by de-embedding the extrinsic parameters. S-parameter simulation of the developed small-signal equivalent circuit model is carried out and is compared with TCAD device simulation results to validate the model. The gradient based optimization approach is used to optimize the small-signal parameters to minimize the error between developed SSEC model and device simulation based s-parameters. The microwave characteristics of optimized SSEC model is carried out (fT = 169 GHz and fmax = 182 GHz) and compared with experimental data available from literature to validate the model.

Deepak Kumar Panda

Papers

The dawn of Ga2O3 HEMTs for high power electronics - A review

Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

Simulation Study of Dielectric Modulated Dual Material Gate TFET Based Biosensor by Considering Ambipolar Conduction

Microwave frequency small‐signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT