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Haichao Chen

Researcher at Huazhong University of Science and Technology

Publications -  16
Citations -  2787

Haichao Chen is an academic researcher from Huazhong University of Science and Technology. The author has contributed to research in topics: Capacitance & Supercapacitor. The author has an hindex of 13, co-authored 16 publications receiving 2395 citations. Previous affiliations of Haichao Chen include China Jiliang University.

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Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors

TL;DR: A 3D highly conductive urchin-like NiCo₂S₄ nanostructure has been successfully prepared using a facile precursor transformation method and demonstrates superior electrochemical performance with ultrahigh high-rate capacitance, very high specific capacitance and excellent cycling stability.
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In situ growth of NiCo2S4 nanotube arrays on Ni foam for supercapacitors: Maximizing utilization efficiency at high mass loading to achieve ultrahigh areal pseudocapacitance

TL;DR: In this paper, the NiCo2S4 nanotube arrays hybrid electrode exhibits an ultrahigh specific capacitance of 14.39 ± 1.39 µm at 5 µm and cycling stability of 92% after 5000 cycles at a high mass loading of 6 µm.
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One-pot synthesis of porous nickel cobalt sulphides: tuning the composition for superior pseudocapacitance

TL;DR: In this article, a pseudocapacitive material for supercapacitors was synthesized from nickel cobalt sulphides with different stoichiometric nickel and cobalt contents.
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NiCo2S4 porous nanotubes synthesis via sacrificial templates: high-performance electrode materials of supercapacitors

TL;DR: In this paper, a sacrificial template method based on the Kirkendall effect was used to synthesize NiCo2S4 porous nanotubes, which showed a specific capacitance of 1093 F g−1 at a current density of 0.2 A g− 1.
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Facilely synthesized porous NiCo2O4 flowerlike nanostructure for high-rate supercapacitors

TL;DR: In this paper, a facile and scalable method to grow porous NiCo 2 O 4 nanostructure was developed, which achieved an enhanced specific capacitance of 658 F ǫg −1 at 1ǫ g −1 compared to NiO and Co 3 O 4.