Low temperature polycrystalline silicon: a review on deposition, physical properties and solar cell applications

A method to grow a boule of silicon carbide is described. The method may include flowing a silicon-containing precursor and a carbon-containing precursor proximate to a heated filament array and forming the silicon carbide boule on a substrate from reactions of the heated silicon-containing and carbon-containing precursors. Also, an apparatus for growing a silicon carbide boule is described. The apparatus may include a deposition chamber to deposit silicon carbide on a substrate, and a precursor transport system for introducing silicon-containing and carbon-containing precursors into the deposition chamber. The apparatus may also include at least one filament or filament segment capable of being heated to a temperature that can activate the precursors, and a substrate pedestal to hold a deposition substrate upon which the silicon carbide boule is grown. The pedestal may be operable to change the distance between the substrate and the filament as the silicon carbide boule is grown.

Production of bulk silicon carbide with hot-filament chemical vapor deposition

Epitaxial growth of strained Si1−yCy films by the hot-wire cell method and its application to metal oxide semiconductor devices

Fabrication and characterization of strained Si1−yCy n-MOSFETs grown by Hot Wire Cell method

The hot wire (HW) cell method was applied to grow epitaxial Si and strained Si 1-y C y films at very low substrate temperature. The epitaxial Si films were successfully obtained on Si(001) at a substrate temperature (T sub ) of 150-250 °C and a SiH 4 pressure of 0.015-0.03 Torr by using only SiH 4 . The structure of the Si films became polycrystalline or microcrystalline either at T sub of over 300 °C or the pressure of over 0.06 Torr. Carbon was introduced to the films by using C 2 H 2 gas and the epitaxial growth of Si 1-y C y at low T sub was also possible by using the hydrogen dilution. The concentration of substitutional C was 0.9%, when the ratio [C 2 H 2 /SiH 4 ] was 0.04. Furthermore, X-ray reciprocal lattice space mapping, indicated the pseudomorphic growth of Si 1-y C y alloy on Si. The thermostability of strained Si 1-y C y films grown by HW cell method was also investigated and the concentration of the substitutional C in the films decreased by annealing at over 800 °C.

Hajime Tamura

Papers

Characterization of low temperature epitaxial Si and Si1−yCy films grown by hot wire cell method

Low temperature epitaxial growth of Si and Si1-yCy films by hot wire cell method