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Institution

Tokyo Institute of Technology

EducationTokyo, Tôkyô, Japan
About: Tokyo Institute of Technology is a education organization based out in Tokyo, Tôkyô, Japan. It is known for research contribution in the topics: Thin film & Catalysis. The organization has 46775 authors who have published 101656 publications receiving 2357893 citations. The organization is also known as: Tokyo Tech & Tokodai.


Papers
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Journal ArticleDOI
01 Jan 1985
TL;DR: A mathematical tool to build a fuzzy model of a system where fuzzy implications and reasoning are used is presented and two applications of the method to industrial processes are discussed: a water cleaning process and a converter in a steel-making process.
Abstract: A mathematical tool to build a fuzzy model of a system where fuzzy implications and reasoning are used is presented. The premise of an implication is the description of fuzzy subspace of inputs and its consequence is a linear input-output relation. The method of identification of a system using its input-output data is then shown. Two applications of the method to industrial processes are also discussed: a water cleaning process and a converter in a steel-making process.

18,803 citations

Journal ArticleDOI
Georges Aad1, T. Abajyan2, Brad Abbott3, Jalal Abdallah4  +2964 moreInstitutions (200)
TL;DR: In this article, a search for the Standard Model Higgs boson in proton-proton collisions with the ATLAS detector at the LHC is presented, which has a significance of 5.9 standard deviations, corresponding to a background fluctuation probability of 1.7×10−9.

9,282 citations

Journal ArticleDOI
25 Nov 2004-Nature
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Abstract: Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.

7,301 citations

Journal ArticleDOI
TL;DR: In this paper, a method of calculating the average internal stress in the matrix of a material containing inclusions with transformation strain is presented. But the authors do not consider the effects of the interaction among the inclusions and of the presence of the free boundary.

7,000 citations

Journal ArticleDOI
TL;DR: It is reported that a layered iron-based compound LaOFeAs undergoes superconducting transition under doping with F- ions at the O2- site and exhibits a trapezoid shape dependence on the F- content.
Abstract: We report that a layered iron-based compound LaOFeAs undergoes superconducting transition under doping with F- ions at the O2- site. The transition temperature (Tc) exhibits a trapezoid shape dependence on the F- content, with the highest Tc of ∼26 K at ∼11 atom %.

6,643 citations


Authors

Showing all 46967 results

NameH-indexPapersCitations
Matthew Meyerson194553243726
Yury Gogotsi171956144520
Masayuki Yamamoto1711576123028
H. Eugene Stanley1541190122321
Takashi Taniguchi1522141110658
Shu-Hong Yu14479970853
Kazunori Kataoka13890870412
Osamu Jinnouchi13588586104
Hector F. DeLuca133130369395
Shlomo Havlin131101383347
Hiroyuki Iwasaki131100982739
Kazunari Domen13090877964
Hideo Hosono1281549100279
Hideyuki Okano128116967148
Andreas Strasser12850966903
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202388
2022358
20213,457
20203,694
20193,783
20183,531