Tokyo Institute of Technology

About: Tokyo Institute of Technology is a(n) education organization based out in Tokyo, Tôkyô, Japan. It is known for research contribution in the topic(s): Thin film & Catalysis. The organization has 46775 authors who have published 101656 publication(s) receiving 2357893 citation(s). The organization is also known as: Tokyo Tech & Tokodai.

Fuzzy identification of systems and its applications to modeling and control

Abstract: A mathematical tool to build a fuzzy model of a system where fuzzy implications and reasoning are used is presented. The premise of an implication is the description of fuzzy subspace of inputs and its consequence is a linear input-output relation. The method of identification of a system using its input-output data is then shown. Two applications of the method to industrial processes are also discussed: a water cleaning process and a converter in a steel-making process.

Observation of a new particle in the search for the Standard Model Higgs boson with the ATLAS detector at the LHC

Abstract: A search for the Standard Model Higgs boson in proton–proton collisions with the ATLAS detector at the LHC is presented. The datasets used correspond to integrated luminosities of approximately 4.8 fb−1 collected at View the MathML source in 2011 and 5.8 fb−1 at View the MathML source in 2012. Individual searches in the channels H→ZZ(⁎)→4l, H→γγ and H→WW(⁎)→eνμν in the 8 TeV data are combined with previously published results of searches for H→ZZ(⁎), WW(⁎), View the MathML source and τ+τ− in the 7 TeV data and results from improved analyses of the H→ZZ(⁎)→4l and H→γγ channels in the 7 TeV data. Clear evidence for the production of a neutral boson with a measured mass of View the MathML source is presented. This observation, which has a significance of 5.9 standard deviations, corresponding to a background fluctuation probability of 1.7×10−9, is compatible with the production and decay of the Standard Model Higgs boson.

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Abstract: Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.

Average stress in matrix and average elastic energy of materials with misfitting inclusions

Abstract: Having noted an important role of image stress in work hardening of dispersion hardened materials, (1,3) the present paper discusses a method of calculating the average internal stress in the matrix of a material containing inclusions with transformation strain. It is shown that the average stress in the matrix is uniform throughout the material and independent of the position of the domain where the average treatment is carried out. It is also shown that the actual stress in the matrix is the average stress plus the locally fluctuating stress, the average of which vanishes in the matrix. Average elastic energy is also considered by taking into account the effects of the interaction among the inclusions and of the presence of the free boundary.

Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05−0.12) with Tc = 26 K

Abstract: We report that a layered iron-based compound LaOFeAs undergoes superconducting transition under doping with F- ions at the O2- site. The transition temperature (Tc) exhibits a trapezoid shape dependence on the F- content, with the highest Tc of ∼26 K at ∼11 atom %.