H
Hang Zhang
Researcher at Chinese Academy of Sciences
Publications - 91
Citations - 4096
Hang Zhang is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Graphene & Thermal conductivity. The author has an hindex of 23, co-authored 71 publications receiving 3323 citations. Previous affiliations of Hang Zhang include California Institute of Technology & University of California.
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Controlled ripple texturing of suspended graphene and ultrathin graphite membranes
TL;DR: The first direct observation and controlled creation of one- and two-dimensional periodic ripples in suspended graphene sheets, using both spontaneously and thermally generated strains are reported, elucidate the ripple formation process and can be understood in terms of classical thin-film elasticity theory.
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Spectroscopy of Covalently Functionalized Graphene
Sandip Niyogi,Elena Bekyarova,Mikhail E. Itkis,Hang Zhang,Kristin Shepperd,Jeremy Hicks,Mike Sprinkle,Claire Berger,Claire Berger,Chun Ning Lau,Walt deHeer,Edward H. Conrad,Robert C. Haddon +12 more
TL;DR: It is demonstrated that the application of covalent bond-forming chemistry modifies the periodicity of the graphene network thereby introducing a band gap (∼0.4 eV), which is observable in the angle-resolved photoelectron spectroscopy of aryl-functionalized graphene.
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Graphene-based atomic-scale switches.
TL;DR: This work reports the development of a nonvolatile memory element based on graphene break junctions, and demonstrates information storage based on the concept of rank coding, in which information is stored in the relative conductance of graphene switches in a memory cell.
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Aryl functionalization as a route to band gap engineering in single layer graphene devices.
Hang Zhang,Elena Bekyarova,Jhao-Wun Huang,Zeng Zhao,Wenzhong Bao,Fenglin Wang,Robert C. Haddon,Chun Ning Lau +7 more
TL;DR: This work chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films, paving the way for CMOS-compatible band gap engineering of graphene electronic devices.
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Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices
Wenzhong Bao,Gang Liu,Zeng Zhao,Hang Zhang,Dong Yan,Aparna Deshpande,Brian J. LeRoy,Chun Ning Lau +7 more
TL;DR: In this article, the authors presented a lithography-free technique for fabrication of clean, high quality graphene devices, which is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes.