Hannah J. Joyce

TL;DR: It is demonstrated that phase-perfect nanowires, of arbitrary diameter, can be achieved simply by tailoring basic growth parameters: temperature and V/III ratio, and this ability to tune crystal structure between twin-free zinc blende and stacking-fault-free wurtzite will enhance the performance of nanowire devices.

TL;DR: Two mechanisms are proposed to explain the success of this two-temperature growth process, one involving Au nanoparticle-GaAs interface conditions and the other involving melting-solidification temperature hysteresis of the Au-Ga nanoparticle alloy.

TL;DR: A comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy will assist in the choice of nanowire materials for different applications, and identify the challenges in producing nanOWires suitable for future electronic and optoelectronic devices.

TL;DR: It is demonstrated that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime, and overcoating theGaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.

TL;DR: In this paper, the authors review the recent efforts of international collaboration which have resulted in significant advances in the growth of exceptionally high quality III-V nanowires and nanowire heterostructures, and major developments in understanding the electronic energy landscapes of these nanometrics and the dynamics of carriers in these nanowsires using photoluminescence and terahertz conductivity spectroscopy.