J
Jennifer Wong-Leung
Researcher at Australian National University
Publications - 173
Citations - 5537
Jennifer Wong-Leung is an academic researcher from Australian National University. The author has contributed to research in topics: Ion implantation & Nanowire. The author has an hindex of 37, co-authored 170 publications receiving 4846 citations. Previous affiliations of Jennifer Wong-Leung include University of Oslo & Royal Institute of Technology.
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Journal ArticleDOI
Electron-pinned defect-dipoles for high-performance colossal permittivity materials
Wanbiao Hu,Yun Liu,Raymond Withers,Terry J. Frankcombe,Lasse Noren,Amanda Snashall,Melanie Kitchin,Paul N. Smith,Bill Gong,Hua Chen,Jason Schiemer,Frank Brink,Jennifer Wong-Leung +12 more
TL;DR: A new electron-pinned, defect-dipole route to ideal CP behaviour is proposed, where hopping electrons are localized by designated lattice defect states to generate giant defect-Dipoles and result in high-performance CP materials.
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Phase Perfection in Zinc Blende and Wurtzite III-V Nanowires Using Basic Growth Parameters
TL;DR: It is demonstrated that phase-perfect nanowires, of arbitrary diameter, can be achieved simply by tailoring basic growth parameters: temperature and V/III ratio, and this ability to tune crystal structure between twin-free zinc blende and stacking-fault-free wurtzite will enhance the performance of nanowire devices.
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Mechanical deformation in silicon by micro-indentation
TL;DR: In this article, the effects on the final deformation microstructure of the load-unload rates and both spherical and pointed indenters were investigated at maximum loads of up to 250 mN.
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Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing.
Qian Gao,Dhruv Saxena,Fan Wang,Lan Fu,Sudha Mokkapati,Yanan Guo,Li Li,Jennifer Wong-Leung,Philippe Caroff,Hark Hoe Tan,Chennupati Jagadish +10 more
TL;DR: Growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers are reported.
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Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon
TL;DR: In this article, the authors used cross-sectional transmission electron microscopy (XTEM) to study spherical indentation of crystalline silicon and found that a thin layer of polycrystalline material has been identified on the low-load indentation.