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Hans-Gerd Boyen

Researcher at University of Hasselt

Publications -  153
Citations -  9849

Hans-Gerd Boyen is an academic researcher from University of Hasselt. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Thin film. The author has an hindex of 39, co-authored 149 publications receiving 8512 citations. Previous affiliations of Hans-Gerd Boyen include University of Ulm & University of Duisburg-Essen.

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Valence Band Photoelectron Spectroscopy of Liquid Silicon

G. Gantner, +2 more
- 20 Jul 1995 - 
TL;DR: In this paper, a new technique based on laser pulse heating, which has been developed for measuring strongly evaporating systems under ultrahigh vacuum conditions, was used to perform valence band photoelectron spectroscopy of liquid silicon.
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Depth profiles of Argon incorporated into Boron Nitride films during preparation and their temperature dependent evolution

TL;DR: In this article, the depth profiles of incorporated Argon using Rutherford backscattering (RBS) spectra were studied with respect to the depth profile of incorporated Boron Nitride (BN) using high resolution transmission electron microscopy.
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Ion beam assisted growth of c-BN films on top of c-BN substrates — a HRTEM study

TL;DR: In this article, the authors analyzed the involved interfaces for each step of the above procedure applying high-resolution transmission electron microscopy (HRTEM) and found that a perfect and immediate c-BN growth can be obtained on an ex- situ stress released substrate, if an appropriate in situ cleaning process is applied.
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Properties of a Co/Cu/Co spin-valve system prepared by an optimized 193 nm pulsed laser deposition process

TL;DR: In this paper, the effect of the laser intensity on the areal density and shape of μm-sized droplets co-deposited onto the substrates by pulsed laser deposition was studied.
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Fabrication of ohmic Au/Cr contacts on top of cubic Boron Nitride films

TL;DR: In this article, Au films were deposited through a mask by Pulsed Laser Ablation (PLD) and evaporation to allow a comparison of the mechanical stability as well as conductive behavior for both methods.