H
Hans-Joachim Schulze
Researcher at Infineon Technologies
Publications - 881
Citations - 3705
Hans-Joachim Schulze is an academic researcher from Infineon Technologies. The author has contributed to research in topics: Semiconductor device & Semiconductor. The author has an hindex of 25, co-authored 880 publications receiving 3660 citations. Previous affiliations of Hans-Joachim Schulze include Siemens.
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Patent
Semiconductor device with a field stop zone
Hans-Joachim Schulze,Franz-Josef Niedernostheide,Helmut Strack,Carsten Schaeffer,Frank Pfirsch +4 more
TL;DR: In this article, the first dopant implant has a first-level concentration maximum and the second-level level concentration maximum with the first level being less than the second level's maximum.
Patent
Bipolar semiconductor device and manufacturing method
TL;DR: A trench IGBT as discussed by the authors is an embedded structure arranged above a collector region and selected from a group consisting of a porous semiconductor region, a cavity, and a semiconductor regions including additional scattering centers for holes.
Patent
Semiconductor component with a drift region and a drift control region
Frank Pfirsch,Anton Mauder,Armin Willmeroth,Hans-Joachim Schulze,Stefan Sedlmaier,Markus Zundel,Franz Hirler,Arunjai Mittal +7 more
TL;DR: A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body, and an accumulation dielectric is arranged between the drift regions and the drift control regions as mentioned in this paper.
Patent
Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method
TL;DR: In this paper, a metal-semiconductor contact between a semiconductor layer and a metallization applied to the semiconductor layers is described, where only a fraction of the introduced doping concentration is electrically active.
Patent
Method for fabricating a semiconductor component
Michael Dr. Rüb,Herbert Schäfer,Armin Willmeroth,Anton Mauder,Stefan Sedlmaier,Roland Rupp,Manfred Dr. Pippan,Hans Weber,Frank Pfirsch,Franz Hirler,Hans-Joachim Schulze +10 more
TL;DR: In this article, the fabrication of a semiconductor component having a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed.