F
Frank Pfirsch
Researcher at Infineon Technologies
Publications - 195
Citations - 2253
Frank Pfirsch is an academic researcher from Infineon Technologies. The author has contributed to research in topics: Trench & Semiconductor. The author has an hindex of 22, co-authored 193 publications receiving 2214 citations. Previous affiliations of Frank Pfirsch include Siemens.
Papers
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Proceedings ArticleDOI
The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential
TL;DR: In this paper, a vertical shrink of the NPT IGBT to a structure with a thin n/sup -/ base and a low doped field stop layer was proposed.
Patent
Semiconductor component having a small forward voltage and high blocking ability
TL;DR: In this paper, a drift path suitable for taking up voltage is formed in a semiconductor body between two electrodes that are arranged at a distance from one another, and at least one semi-insulating layer is provided parallel to the drift path.
Patent
Semiconductor device with a field stop zone
Hans-Joachim Schulze,Franz-Josef Niedernostheide,Helmut Strack,Carsten Schaeffer,Frank Pfirsch +4 more
TL;DR: In this article, the first dopant implant has a first-level concentration maximum and the second-level level concentration maximum with the first level being less than the second level's maximum.
Patent
Compensation component and process for producing the compensation component
Dirk Ahlers,Frank Pfirsch +1 more
TL;DR: In this article, a drift path consisting of p-conducting and nconducting layers is proposed to be led around or along a trench, and a process for producing the compensation component is also provided.
Patent
High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure
TL;DR: In this paper, a high-voltage-resistant semiconductor component has vertically conductive semiconductor areas and a trench structure, which are formed from semiconductor body areas of a first conductivity type.