Showing papers by "Hans Norström published in 1978"
TL;DR: Barrier formation of p-type silicon by sputtering of aluminium and titanium contacts is reported in this paper, where a silicon wafer exposed to a r.f.-glow discharge during sputter-deposition is subjected to bombardment of neutral sputtered atoms, ions and electrons.
Abstract: Barrier formation of p-type silicon by sputtering of aluminium and titanium contacts are reported. A barrier height of 0.7 eV was found. A silicon wafer exposed to a r.f.-glow discharge during sputter-deposition is subjected to bombardment of neutral sputtered atoms, ions and electrons. This process will introduce charged centers at the surface of the silicon wafer. Such centers are shown to drastically change the properties of a Schottky-barrier, which is extremely surface-sensitive. The glow discharge bombardment of the surface will create donor-like states at the surface.
4 citations