H
Hao-Yu Chen
Researcher at TSMC
Publications - 9
Citations - 213
Hao-Yu Chen is an academic researcher from TSMC. The author has contributed to research in topics: Wafer & Gate dielectric. The author has an hindex of 5, co-authored 8 publications receiving 213 citations.
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Patent
Doping of semiconductor fin devices
TL;DR: In this paper, the dopant ions are implanted at a first angle (e.g., greater than about 7°) with respect to the normal of the top surface of the semiconductor fin to dope the second sidewall surface and the top surfaces.
Patent
Gate electrode for a semiconductor fin device
TL;DR: In this paper, a planarized gate electrode for a multiple-gate transistor is proposed, which can be patterned using conventional methods to produce a gate electrode that straddles the active area of the multiple gate transistor and has a constant transistor gate length.
Patent
Silicon-on-insulator ulsi devices with multiple silicon film thicknesses
TL;DR: In this article, a wafer is provided comprising a semiconductor film ( having at least two regions) overlying a buried insulator layer overlying the substrate, which is masked to provide at least one semiconductor masking portion having a first thickness.
Patent
SOI chip with mesa isolation and recess resistant regions
TL;DR: A semiconductor-on-insulator structure includes a substrate and a buried insulator layer overlying the substrate, and a plurality of semiconductor islands overlie the buried layer as discussed by the authors.