The present invention discloses a miniaturized terahertz low pass filter, belongs to a filter, and particularly to a terahertz low pass filter. According to the present invention, a split ring (SRR) structure is introduced to a low pass filter design, and the split ring is improved to implement series-parallel connection of the SRR structure, and finally implement a wide high-frequency suppressing attenuation band. The low pass filter implemented by using the SRR structure shows good low pass filtering characteristics. Because the SRR structure may be used to control a passband of the filter by adjusting a few variables, and used line widths are consistent and may be regulated, design and processing difficulties are reduced. Compared with a low pass filter formed by a step-type structure and a band-gap energy structure, with a same attenuation band suppression characteristic, the split ring low pass filter has a smaller size and a wider attenuation band.

Miniaturized terahertz low pass filter

The invention discloses a miniaturized low-pass filter based on s hexagonal T-shaped resonator. The filter is characterized in that: the shape of the filter is composed of two hexagonal T-shaped resonators and coupling lines, which ensures the compactness of the filter structure; In addition, two rectangular resonators are added to the input and output ports to ensure the fast roll-off of the filter. In addition, a band-stop structure is added to the filter, which ensures that the stopband bandwidth of the filter is wide enough to achieve good characteristics. In addition, a signal input portand a signal output port are provided on the left and right sides of the main filter, respectively. The invention provides a novel low-pass filter topology structure, which is compact, realizes miniaturization requirements, and has better performance than other low-pass filters.

A miniaturized low-pass filter based on hexagonal T-shaped resonator

The invention provides a radio frequency filter, a radio frequency module and an electronic device. The radio frequency filter includes a first conductive pattern; a second conductive pattern connected to a first point of the first conductive pattern and extended; a third conductive pattern connected to a second point of the first conductive pattern and extended to surround a portion of the secondconductive pattern; a fourth conductive pattern; a fifth conductive pattern connected to a third point of the fourth conductive pattern and extended; and a sixth conductive pattern connected to a fourth point of the fourth conductive pattern and extended to surround a portion of the fifth conductive pattern. The first conductive pattern extends toward the fourth conductive pattern and the fourthconductive pattern extends toward the first conductive pattern. A distance between the first conductive pattern and the fourth conductive pattern is greater than or equal to a distance between the third conductive pattern and the sixth conductive pattern.

Radio frequency filter, radio frequency module and electronic device

Active metasurfaces provide promising tunabilities to artificial meta−atoms with unnatural optical properties and have found important applications in dynamic cloaking, reconfigurable intelligent surfaces, etc. As the development of semiconductor technologies, electrically controlled metasurfaces with semiconductor materials and devices have become the most promising candidate for the dynamic and programmable applications due to the large modulation range, compact footprint, pixel−control capability, and small switching time. Here, a technical review of active and programmable metasurfaces is given in terms of semiconductors, which consists of metasurfaces with diodes, transistors, and newly rising semiconductor materials. Physical models, equivalent circuits, recent advances, and development trends are discussed collectively and critically. This review represents a broad introduction for readers just entering this interesting field and provides perspective and depth for those well−established.

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Active and Programmable Metasurfaces with Semiconductor Materials and Devices

This invention discloses a miniaturized terahertz is low pass filter now, belongs to a wave filter, especially terahertz low pass filter now. The utility model discloses in introducing low pass filter design with split ring (SRR) structure to improving the connection in series -parallel that realizes the SRR structure to it and finally realizing wide HF reject stop band, the low pass filter who realizes with the SRR structure has demonstrateed good low pass filter characteristic. Because the SRR structure is through adjusting the passband that little variablees can control filter, and the live width of using is unanimous and can regulate and control, the degree of difficulty that has reduced the design like this and processed. Compare with step type structure and band -gap energy structure composing's low pass filter, under the same stop band rejection characteristic, split ring low pass filter has more small -size and wideer stop band.

Miniaturized terahertz is low pass filter now

Here, the tenth harmonic mixing technology based on planar GaAs Schottky diode is first proposed for the 1.1 terahertz (THz) frequency conversion module. The first higher order mode cut-off frequency of the suspended microstrip line has been investigated to determine the appropriate cross-sectional dimension of transmission line shield cavity in the radio frequency (RF) circuit portion. The height of shield cavity of transmission line is designed to be discontinuous in order to facilitate the assembly of the diode. A modelling approach combining field and circuit is used to achieve joint simulation of linear passive structure and diode non-linear characteristics. The simulation results show that the frequency conversion loss of this mixer is <55
 
dB in the RF frequency range of 1.03–1.154 THz, and the best frequency conversion loss is 50
 
dB at RF of 1.098 THz.

https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/iet-map.2018.6194

1.1 THz tenth harmonic mixer based on planar GaAs Schottky diode

The physical composition and microwave properties of the PIN diode are introduced, and the switching characteristics of the PIN diode are used to design a Ku-band 1:8 switch circuit. ADS microwave simulation software was used to simulate the RF performance of the 1:8 switch, which was calculated to have an insertion loss of 2.5 dB, a reflection coefficient of 16 dB and an isolation of 34 dB. The actual test results are in good agreement with the simulation results.

He Jie

Papers

Miniaturized terahertz is low pass filter now

Miniaturized terahertz low pass filter

1.1 THz tenth harmonic mixer based on planar GaAs Schottky diode

A Ku-band Switch Design Based on PIN Diodes