Simulation and the monte carlo method

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

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The 2018 GaN power electronics roadmap

Gallium nitride (GaN) power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. In addition, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic $R_{\mathrm {{ds}},\mathrm {{on}}}$ , breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters, as these devices become increasingly available on a commercial scale.

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

The systematic characterization of a 650-V/13-A enhancement-mode GaN power transistor with p-GaN gate is presented. Critical device parameters such as ON-resistance $R_{{\rm{ON}}}$ and threshold voltage $V_{{\rm{TH}}}$ are evaluated under both static and dynamic (i.e., switching) operating conditions. The dynamic R ON is found to exhibit different dependence on the gate drive voltage $V_{{\rm{GS}}}$ from the static $R_{{\rm{ON}}}$ . While reasonably suppressed at higher $V_{{\rm{GS}}}$ of 5 and 6 V, the degradation in dynamic R ON is significantly larger at lower $V_{{\rm{GS}}}$ of 3–4 V, which is attributed to the positive shift in $V_{{\rm{TH}}}$ under switching operations. In addition to characterization of discrete devices, a custom-designed double-pulse test circuit with 400-V, 10-A test capability is built to evaluate the transient switching performance of the p-GaN gate power transistors. Optimal gate drive conditions are proposed to: 1) provide sufficient gate over-drive to minimize the impact of the $V_{{\rm{TH}}}$ shift on the dynamic $R_{{\rm{ON}}}$ ; and 2) leave enough headroom to save the device from excessive gate stresses. Moreover, gate drive circuit design and board layout considerations are also discussed by taking into account the fast switching characteristics of GaN devices.

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

Wide bandgap (WBG) device-based power electronics converters are more efficient and lightweight than silicon-based converters. WBG devices are an enabling technology for many motor drive applications and new classes of compact and efficient motors. This paper reviews the potential applications and advances enabled by WBG devices in ac motor drives. Industrial motor drive products using WBG devices are reviewed, and the benefits are highlighted. This paper also discusses the technical challenges, converter design considerations, and design tradeoffs in realizing the full potential of WBG devices in motor drives. There is a tradeoff between high switching frequency and other issues such as high dv/dt and electromagnetic interference. The problems of high common mode currents and bearing and insulation damage, which are caused by high dv/dt , and the reliability of WBG devices are discussed.

Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges

This paper presents a 15kV silicon carbide (SiC) MOSFET gate drive, which features high common-mode (CM) noise immunity, small size, light weight, and robust yet flexible protection functions. To enhance the gate-drive power reliability, a power over fiberbased isolated power supply is designed to replace the traditional design based on isolation transformer. It delivers the gate-drive power by laser light via optical fiber over a long distance (>1 m), so a high isolation voltage (>20 kV) is achieved, and the circuit size and weight are reduced. More importantly, it eliminates the parasitic CM capacitance coupling the power stage and control stage, and thus eradicates the control signal distortion caused by high dv/dt in switching transients of the high-voltage SiC devices. In addition, the gate-drive circuit design integrates comprehensive protection functions, including the overcurrent protection, undervoltage/overvoltage lockout, active miller clamping, soft turn off, and fault report. The overcurrent protection responds within 400 ns. The experimental results from a 15kV double-pulse tester are presented to validate the design.

A Gate Drive With Power Over Fiber-Based Isolated Power Supply and Comprehensive Protection Functions for 15-kV SiC MOSFET

This article presents the design and development of a 7-kV dc bus, 1-MVA, 0–1000 Hz modular multilevel converter (MMC) prototype for high speed medium-voltage variable frequency drives. The system is designed based on 1.7-kV silicon carbide (SiC) mosfet s. First, the full in-depth design of the prototype is provided, including the submodules, arm inductors, and system integration. Then, the unique control scheme and the control hardware design are presented to achieve the full-frequency range operation. The power loss based on Si and SiC devices is analyzed. Finally, experimental results are presented to demonstrate the performance of both the SiC-based submodule and the full-scale MMC system. Compared with the traditional Si-based solution, the established SiC MMC can reduce the drive system volume by 75% and achieve 325% power density, and the peak energy efficiency reaches around 99.35%.

7-kV 1-MVA SiC-Based Modular Multilevel Converter Prototype for Medium-Voltage Electric Machine Drives

The medium power rating two-level three phase voltage source inverter is among the most popular power conversion systems. The typical switching frequency of the commercial medium power rating inverter, however, is limited to tens of kHz. By increasing the switching frequency and using emerging gallium-nitride devices, the size of the overall system can be greatly reduced. This paper begins by reviewing all commercially available GaN power transistors and their package technologies. The GS66516T device from GaN Systems is selected due to its suitable ratings and superior package performance. Then, a half-bridge structure is designed for this device to achieve low parasitic inductance and strong cooling capability at the same time. The dynamic characterization results of this 650V/60A Enhancement-mode GaN transistor are extracted with the proposed half-bridge structure. A gate drive circuit with comprehensive protection function is integrated. Based on the proposed phase-leg structure, a 10 kW three phase inverter prototype is built and the experimental waveform is shown at the end.

Design of a 10 kW GaN-based high power density three-phase inverter

This paper presents the short-circuit behavior and degradation of 650-V/60-A enhancement-mode Gallium nitride (GaN) high electron mobility transistors (HEMTs) under various test conditions. First, this paper introduces the basic information of device, test method, and platform. Subsequently, single pulse, 10-μs short-circuit tests are performed from 50 to 400 V to extract the typical behavior of devices. Both short-circuit current self-regulation phenomenon and quick failure have been observed. Simultaneously, the short-circuit behavior of the device at various gate drive voltages and temperatures has been explored to identify the protection condition. Then, repetitive short-circuit tests have been performed to reveal device degradation trends. As a result, their output current reduction and gate-to-source threshold voltage shift have occurred. This paper shows the critical need to improve the robustness of this type of GaN HEMT from the device and circuit perspectives.

Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions

In this paper, a family of bidirectional dual-input dc/dc converters is proposed to combine a photovoltaic system and battery energy storage system. This family of converters utilizes a full-bridge, or half-bridge current-source circuit, as the primary side, and a quasi-switched-capacitor circuit as the secondary side. Depending on the power level of the primary side and voltage level of the battery, different topologies can be selected. Compared to other bidirectional multiple-input dc/dc converters with galvanic isolation, this family of converters requires less switches and passive components, reduces voltage stress on switches, and realizes soft switching for all switches. The operation principle of the converter is presented, and a power sharing strategy between two input sources is proposed. A 2-kW full-bridge circuit prototype is built in the lab, based on Gallium Nitride (GaN) switching devices. Simulation and experimental results are also presented to verify the theoretical analysis.

He Li

Papers

A Gate Drive With Power Over Fiber-Based Isolated Power Supply and Comprehensive Protection Functions for 15-kV SiC MOSFET

7-kV 1-MVA SiC-Based Modular Multilevel Converter Prototype for Medium-Voltage Electric Machine Drives

Design of a 10 kW GaN-based high power density three-phase inverter

Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions

A Family of Quasi-Switched-Capacitor Circuit-Based Dual-Input DC/DC Converters for Photovoltaic Systems Integrated With Battery Energy Storage