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H

He Zhu

Researcher at University of Technology, Sydney

Publications -  78
Citations -  1590

He Zhu is an academic researcher from University of Technology, Sydney. The author has contributed to research in topics: Band-pass filter & Wideband. The author has an hindex of 18, co-authored 74 publications receiving 922 citations. Previous affiliations of He Zhu include University of Queensland & South China University of Technology.

Papers
More filters
Proceedings ArticleDOI

An ultra-wideband (UWB) bandpass filter with microstrip-to-CPW transition and a notch-band

TL;DR: In this article, an ultra wideband (UWB) bandpass filter is proposed, which composes of two pairs of microstrip short-circuited stubs which provide a microstrip-to-CPW transition, and a CPW resonator whose length is about half-guided-wavelength (λg/2) at 6.85GHz.
Journal ArticleDOI

Miniaturised millimetre-wave BPF with broad stopband suppression in silicon–germanium technology

TL;DR: In this paper, a quasi-millimetre-wave bandpass filter (BPF) was designed and implemented in a standard 0.13µm bipolar complementary metaloxide semiconductor technology.
Proceedings ArticleDOI

Planar UWB phase shifter using parallel coupled lines combined with short-ended stubs and impedance transformer

TL;DR: In this article, an ultra wideband (UWB) phase shifter with wide range of differential phase shift is proposed, which uses quarter wavelength parallel coupled lines combined with short-ended stub structure and an impedance transformer.
Proceedings ArticleDOI

Compact dual-band bandpass filter using multi-mode resonator of short-ended and open-ended coupled lines

TL;DR: In this paper, a dual-band bandpass filter using a multi-mode resonator (MMR) is proposed, which is composed of two pairs of short-ended coupled-lines, four open-ended coupling lines and four connecting transmission lines.
Journal ArticleDOI

Miniaturized On-Chip Notch Filter With Sharp Selectivity and >35-dB Attenuation in 0.13-μm Bulk CMOS Technology

TL;DR: In this paper , a compact electromagnetic (EM) structure for miniaturized notch filter design in standard silicon technology is presented, which achieves sharp selectivity and large notch attenuation depth by producing a strong coupling between the top layer and the bottom layer.