H
Heiko B. Weber
Researcher at University of Erlangen-Nuremberg
Publications - 179
Citations - 9506
Heiko B. Weber is an academic researcher from University of Erlangen-Nuremberg. The author has contributed to research in topics: Graphene & Silicon carbide. The author has an hindex of 35, co-authored 166 publications receiving 8668 citations. Previous affiliations of Heiko B. Weber include Karlsruhe Institute of Technology.
Papers
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Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length
Bernd Zippelius,Martin Hauck,Svetlana Beljakowa,Heiko B. Weber,Michael Krieger,Hiroyuki Nagasawa,Hidetsugu Uchida,Gerhard Pensl,Adolf Schöner +8 more
TL;DR: In this paper, the channel mobility in 3C-SiC n-MOSFETs is investigated by currentvoltage and Hall-effect measurements, and the observed results are traced back to the influence of Si-terminated stacking faults (Si-SFs), to the resistance of the drain/source contact and to the warping of the wafer caused by the special growth technique.
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Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain
Maximilian Rühl,Johannes Lehmeyer,Roland Nagy,Matthias Weisser,Michel Bockstedte,Michael Krieger,Heiko B. Weber +6 more
TL;DR: In this paper, a photoluminescence (PL) study of the recently discovered TS defect in 4H silicon carbide was performed by means of low temperature (≈4 K) ensemble measurements.
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Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO2 Interfaces
TL;DR: In this paper, the effect of phosphorus on the electrical properties of n-type 4H-SiC MOS capacitors is studied, and it is shown that the side effect of the implantation of phosphorus is generation of very fast interface states, which are able to follow the frequencies over 1 MHz.
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Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon
Sebastian Roensch,Victor Sizov,Takuma Yagi,Saad Murad,Lars Groh,Stephan Lutgen,Markus Sickmoeller,Michael Krieger,Heiko B. Weber +8 more
TL;DR: In this paper, temperature dependent magnetoresistance measurements on the 2-dimensional electron gas of epitaxially grown AlGaN/GaN heterojunctions on silicon (Si) are presented.
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Thermoelectricity of near-resonant tunnel junctions and their near-Carnot efficiency
TL;DR: In this paper, the authors present experiments on resonant tunnel junctions and molecular junctions that uncover correlations between electrical conductance G and the Seebeck coefficient S, in particular rigid boundaries for G$ and S$.