Charge-Transfer and Energy-Transfer Processes in π-Conjugated Oligomers and Polymers: A Molecular Picture

A review was presented to demonstrate a historical description of the synthesis of light-emitting conjugated polymers for applications in electroluminescent devices. Electroluminescence (EL) was first reported in poly(para-phenylene vinylene) (PPV) in 1990 and researchers continued to make significant efforts to develop conjugated materials as the active units in light-emitting devices (LED) to be used in display applications. Conjugated oligomers were used as luminescent materials and as models for conjugated polymers in the review. Oligomers were used to demonstrate a structure and property relationship to determine a key polymer property or to demonstrate a technique that was to be applied to polymers. The review focused on demonstrating the way polymer structures were made and the way their properties were controlled by intelligent and rational and synthetic design.

Synthesis of Light-Emitting Conjugated Polymers for Applications in Electroluminescent Devices

Organic semiconductors have been the subject of active research for over a decade now, with applications emerging in light-emitting displays and printable electronic circuits. One characteristic feature of these materials is the strong trapping of electrons but not holes1: organic field-effect transistors (FETs) typically show p-type, but not n-type, conduction even with the appropriate low-work-function electrodes, except for a few special high-electron-affinity2,3,4 or low-bandgap5 organic semiconductors. Here we demonstrate that the use of an appropriate hydroxyl-free gate dielectric—such as a divinyltetramethylsiloxane-bis(benzocyclobutene) derivative (BCB; ref. 6)—can yield n-channel FET conduction in most conjugated polymers. The FET electron mobilities thus obtained reveal that electrons are considerably more mobile in these materials than previously thought. Electron mobilities of the order of 10-3 to 10-2 cm2 V-1 s-1 have been measured in a number of polyfluorene copolymers and in a dialkyl-substituted poly(p-phenylenevinylene), all in the unaligned state. We further show that the reason why n-type behaviour has previously been so elusive is the trapping of electrons at the semiconductor–dielectric interface by hydroxyl groups, present in the form of silanols in the case of the commonly used SiO2 dielectric. These findings should therefore open up new opportunities for organic complementary metal-oxide semiconductor (CMOS) circuits, in which both p-type and n-type behaviours are harnessed.

General observation of n-type field-effect behaviour in organic semiconductors

Electron and ambipolar transport in organic field-effect transistors.

Structural and electronic criteria for ambient stability in n-type organic materials for organic field-effect transistors (OFETs) are investigated by systematically varying LUMO energetics and molecular substituents of arylene diimide-based materials Six OFETs on n+-Si/SiO2 substrates exhibit OFET response parameters as follows: N,N'-bis(n-octyl)perylene-3,4:9,10-bis(dicarboximide) (PDI-8): mu = 032 cm2 V(-1) s(-1), Vth = 55 V, I(on)/I(off) = 10(5); N,N'-bis(n-octyl)-1,7- and N,N'-bis(n-octyl)-1,6-dibromoperylene-3,4:9,10-bis(dicarboximide) (PDI-8Br2): mu = 3 x 10(-5) cm2 V(-1) s(-1), Vth = 62 V, I(on)/I(off) = 10(3); N,N'-bis(n-octyl)-1,6,7,12-tetrachloroperylene-3,4:9,10-bis(dicarboximide) (PDI-8Cl4): mu = 4 x 10(-3) cm2 V(-1) (s-1), Vth = 37 V, I(on)/I(off) = 10(4); N,N'-bis(n-octyl)-2-cyanonaphthalene-1,4,5,8-bis(dicarboximide) (NDI-8CN): mu = 47 x 10(-3) cm2 V(-1) s(-1), Vth = 28, I(on)/I(off) = 10(5); N,N'-bis(n-octyl)-1,7- and N,N'-bis(n-octyl)-1,6-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2): mu = 013 cm2 V(-1) s(-1), Vth = -14 V, I(on)/I(off) = 10(3); and N,N'-bis(n-octyl)-2,6-dicyanonaphthalene-1,4,5,8-bis(dicarboximide) (NDI-8CN2): mu = 015 cm2 V(-1) s(-1), Vth = -37 V, I(on)/I(off) = 10(2) Analysis of the molecular geometries and energetics in these materials reveals a correlation between electron mobility and substituent-induced arylene core distortion, while Vth and I(off) are generally affected by LUMO energetics Our findings also indicate that resistance to ambient charge carrier trapping observed in films of N-(n-octyl)arylene diimides occurs at a molecular reduction potential more positive than approximately -01 V (vs SCE) OFET threshold voltage shifts between vacuum and ambient atmosphere operation suggest that, at E(red1) -01 V, the trap density increase is negligible OFETs fabricated with the present n-type materials having E(red1) > -01 V operate at conventional gate biases with minimal hysteresis in air This reduction potential corresponds to an overpotential for the reaction of the charge carriers with O2 of approximately 06 V N,N'-1H,1H-Perfluorobutyl derivatives of the perylene-based semiconductors were also synthesized and used to fabricate OFETs, resulting in air-stable devices for all fluorocarbon-substituted materials, despite generally having E(red1) < -01 V This behavior is consistent with a fluorocarbon-based O2 barrier mechanism OFET cycling measurements in air for dicyanated vs fluorinated materials demonstrate that energetic stabilization of the charge carriers results in greater device longevity in comparison to the OFET degradation observed in air-stable semiconductors with fluorocarbon barriers

Tuning orbital energetics in arylene diimide semiconductors. materials design for ambient stability of n-type charge transport.

Achieving balanced electron-hole injection and perfect recombination of the charge carriers is central to the design of efficient polymer light-emitting diodes (LEDs). A number of approaches have focused on modification of the injection contacts, for example by incorporating an additional conducting-polymer layer at the indium-tin oxide (ITO) anode. Recently, the layer-by-layer polyelectrolyte deposition route has been developed for the fabrication of ultrathin polymer layers. Using this route, we previously incorporated ultrathin (<100 A) charge-injection interfacial layers in polymer LEDs. Here we show how molecular-scale engineering of these interlayers to form stepped and graded electronic profiles can lead to remarkably efficient single-layer polymer LEDs. These devices exhibit nearly balanced injection, near-perfect recombination, and greatly reduced pre-turn-on leakage currents. A green-emitting LED comprising a poly(p-phenylene vinylene) derivative sandwiched between a calcium cathode and the modified ITO anode yields an external forward efficiency of 6.0 per cent (estimated internal efficiency, 15-20 per cent) at a luminance of 1,600 candelas per m2 at 5 V.

Heinrich Becker

Papers

Molecular-scale interface engineering for polymer light-emitting diodes