H
Heinz Gerischer
Researcher at Max Planck Society
Publications - 256
Citations - 13053
Heinz Gerischer is an academic researcher from Max Planck Society. The author has contributed to research in topics: Semiconductor & Electrolyte. The author has an hindex of 59, co-authored 256 publications receiving 12609 citations. Previous affiliations of Heinz Gerischer include Fritz Haber Institute of the Max Planck Society & Ludwig Maximilian University of Munich.
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The role of oxygen in photooxidation of organic molecules on semiconductor particles
Heinz Gerischer,Adam Heller +1 more
TL;DR: In this paper, the kinetics of O 2 reduction accompanying oxidation of organic compounds on photocatalytic semiconductor particles are analyzed and the rate-controlling processes are defined and the electron reactivities are derived for two cases: A, electrons moving freely in the semiconductor particle and reacting with O 2 anywhere on its surface and B, electrons trapped at or near the surface of the polysilicon particle and transferred from the traps only to nearby O 2 molecules
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Underpotential deposition of metals and work function differences
TL;DR: In this article, the potential difference between monolayer and bulk deposition is closely related to the difference in the work functions of substrate and deposit, causing a partial charge of the adatoms.
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On the stability of semiconductor electrodes against photodecomposition
TL;DR: In this article, the thermodynamics of cathodic reduction of semiconductors by electrons and of anodic oxidation by holes are discussed and related to the free energy of electrons and holes in illuminated semiconductor electrodes.
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The impact of semiconductors on the concepts of electrochemistry
TL;DR: In this article, it was realized that semiconductor electrodes behave differently in many respects and offer new insights into the role played by the electronic properties of a solid in its electrochemical reactivity.
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Electrochemical photo and solar cells principles and some experiments
TL;DR: The photovoltaic effects in such cells are based on the formation of a Schottky barrier at the interface between a semiconductor and a suitable redox electrolyte.