Showing papers by "Helena Gleskova published in 2012"
TL;DR: In this paper, a gate dielectric for lowvoltage organic thin-film transistors based on an inorganic/organic bi-layer with a total thickness of up to 20nm was developed.
Abstract: We have developed a gate dielectric for low-voltage organic thin-film transistors based on an inorganic/organic bi-layer with a total thickness of up to ~ 20 nm. The inorganic layer is aluminium oxide formed by UV/ozone treatment of aluminium layers. The organic layer is 1-octylphosphonic acid. The preparation of aluminium oxide (AlO x ) was studied with respect to the threshold voltage of p-channel thin-film transistors based on thermally evaporated pentacene. The results demonstrate that the threshold voltage decreases with increasing UV/ozone exposure time. The threshold voltage varies by 0.7 V and the gate-source leakage current by a factor of 10 as a function of aluminium oxide preparation. The breakdown voltages of the bi-layer gate dielectrics vary between 5 and 12 V and the electrical breakdown field is at least 5 MV/cm for all AlO x preparation conditions.
16 citations
TL;DR: In this article, the effect of pentacene purity and evaporation rate on lowvoltage organic thin-film transistors (OTFTs) prepared solely by dry fabrication techniques was studied.
Abstract: We have studied the effect of pentacene purity and evaporation rate on low-voltage organic thin-film transistors (OTFTs) prepared solely by dry fabrication techniques. The maximum field-effect mobility of 0.07 cm2/Vs was achieved for the highest pentacene evaporation rate of 0.32 A/s and four-time purified pentacene. Four-time purified pentacene also led to the lowest threshold voltage of -1.1 V and inverse subthreshold slope of ~100 mV/decade. In addition, pentacene surface was imaged using atomic force microscopy, and the transistor channel and contact resistances for various pentacene evaporation rates were extracted and compared to field-effect mobilities.
3 citations
Patent•
31 Jul 2012
TL;DR: In this article, a dry method for forming a single organic layer on a substrate was proposed, which involves depositing organic molecules by vapour deposition on the substrate, wherein some of the molecules are bonded to the substrate and others are held together via intermolecular interaction.
Abstract: A dry method for forming a single organic layer on a substrate, the method involving: depositing organic molecules by vapour deposition on the substrate, wherein some of the molecules are bonded to the substrate and others are held together via intermolecular interaction, and removing using a dry process the organic molecules that are held together by breaking the intermolecular interaction, leaving a monolayer of organic molecules bonded to the substrate.