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Hemanshu D. Bhatt

Researcher at Virginia Tech

Publications -  18
Citations -  453

Hemanshu D. Bhatt is an academic researcher from Virginia Tech. The author has contributed to research in topics: Thermal conductivity & Electrode. The author has an hindex of 11, co-authored 18 publications receiving 436 citations.

Papers
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Journal ArticleDOI

Role of the Interfacial Thermal Barrier in the Effective Thermal Diffusivity/Conductivity of SiC-Fiber-Reinforced Reaction-Bonded Silicon Nitride

TL;DR: In this article, thermal diffusivity data transverse to the fiber direction for composites composed of a reaction bonded silicon nitride matrix reinforced with uniaxially aligned carbon-coated silicon carbide fibers indicate the existence of a significant thermal barrier at the matrix-fiber interface.
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Thin film TiC/TaC thermocouples

TL;DR: In this paper, the sheet resistance of thin-film thermocouple applications was investigated using a four-point probe, and it was observed that thin films of TaC and TiC yield fairly high and stable thermoemf throught the temperature range of stability.
Patent

Simple method of fabricating ferroelectric capacitors

TL;DR: In this article, an adhesion/diffusion barrier layer is added to the bottom of a bottom electrode structure, with an oxide barrier layer sandwiched there between, and a metal or metal alloy and an oxide of the metal or alloy.
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Role of Interfacial Carbon layer in the Thermal Diffusivity/Conductivity of Silicon Carbide Fiber-Reinforced Reaction-Bonded Silicon Nitride Matrix Composites

TL;DR: In this article, a combination of a carbon coatings on the fibers and an interfacial gap due to the thermal expansion mismatch in the composite can significantly lower the effective thermal diffusivity in the direction transverse to the fiber.
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Novel high temperature multilayer electrode-barrier structure for high-density ferroelectric memories

TL;DR: In this paper, a Pt-Rh-Ox/Pt-Rh -O ox electrode-barrier structure which acts as an electrode as well as a diffusion barrier for integration of the ferroelectric capacitors directly onto silicon deposited using an in situ reactive rf sputtering process was reported.