H
Henrik Pedersen
Researcher at Linköping University
Publications - 118
Citations - 2269
Henrik Pedersen is an academic researcher from Linköping University. The author has contributed to research in topics: Chemical vapor deposition & Thin film. The author has an hindex of 23, co-authored 115 publications receiving 1862 citations.
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Synthesis and characterisation of Gd2O3 nanocrystals functionalised by organic acids.
TL;DR: IR measurements show that the molecules coordinate to the Gd2O3 surface via the carboxylate group in a bidentate or bridging manner, and the organic-acid/particle complexes were characterised by XRPD, TEM, FTIR, Raman, and XPS.
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IR and quantum-chemical studies of carboxylic acid and glycine adsorption on rutile TiO2 nanoparticles.
TL;DR: The results from DFT calculations and ab initio molecular-dynamics simulations of formic acid adsorption onto TiO2 are compared and match well with the experimental IR measurements, supporting the bridge-binding geometry of carboxylic-acid adsorb strongly to the surfaces in a bridge-coordinating mode.
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High proton relaxivity for gadolinium oxide nanoparticles.
TL;DR: The study indicates the possibility of obtaining at least doubled relaxivity compared to Gd–DTPA using Gd2O3–DEG nanocrystals as contrast agent, which is very promising for future studies of contrast agents based on gadolinium-containing nanocry crystals.
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Chloride-based CVD growth of silicon carbide for electronic applications.
Henrik Pedersen,Stefano Leone,Olof Kordina,Anne Henry,Shin Ichi Nishizawa,Yaroslav Koshka,Erik Janzén +6 more
TL;DR: Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications and the Application of CVD Technology for Electronics Applications is described.
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Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
Henrik Pedersen,Stefano Leone,Stefano Leone,Anne Henry,Franziska Christine Beyer,Vanya Darakchieva,Erik Janzén +6 more
TL;DR: In this paper, the chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall chemical vapour deposition (CVD) reactor with growth rates higher than 100mm/h.