Showing papers by "Herman Maes published in 1976"
TL;DR: In this paper, the transition from Fowler-Nordheim injection to a trap-assisted tunneling mechanism in thin oxide MNOS devices under low applied voltages has been found from transient measurements.
Abstract: Evidence for the transition from Fowler‐Nordheim injection to a trap‐assisted tunneling mechanism in thin oxide MNOS devices under low applied voltages has been found from transient measurements. The agreement between theoretical prediction and experimental results is very good.
19 citations
TL;DR: In this paper, the decay of flatband voltage in MNOS capacitors has been investigated and the decay can be attributed to back-tunneling, while the charge displacement is due to a redistribution of the remaining charge over the nitride traps.
Abstract: The decay of the flatband voltage in MNOS capacitors has been investigated. Simultaneous determination of charge content in the nitride and the centroid of its distribution indicates both a discharge of the structure and a penetration of charge deep into the nitride. The discharge can be ascribed to back‐tunneling, while the charge displacement is due to a redistribution of the remaining charge over the nitride traps.
17 citations