Showing papers by "Herman Maes published in 2000"
TL;DR: In this article, a promising method for obtaining Pb(Zr, Ti)O3(PZT) layers with excellent endurance and pulse-switching properties on RuO2 electrodes using the sol-gel method was presented.
Abstract: We present a promising method for obtaining Pb(Zr, Ti)O3(PZT) layers with excellent endurance and pulse-switching properties on RuO2 electrodes using the sol–gel method As the substrate temperature during reactive sputtering of the RuO2 bottom electrode layer is reduced, the (111) PZT texture component becomes more pronounced, an effect attributed to the change from columnar to granular RuO2 film morphology Reducing the residual PZT (100) and (101) texture components was found to be a necessary condition for obtaining optimal pulse switching and endurance properties of the layers Highly (111)-oriented PZT layers, obtained on RuO2 grown at 150 °C exhibit a net switched charge of >60 μC/cm2 during pulse measurement and <10% degradation after 1011 fatigue cycles
26 citations
11 Sep 2000
TL;DR: In this paper, a physics-based deep submicron mismatch model is presented, which describes the whole region of operation of the MOS transistor and contains four mismatch parameters, the threshold voltage and the drain current.
Abstract: In this paper a physics based deep submicron mismatch model is presented. It is demonstrated on a 0.25 μm technology. The simple model describes the whole region of operation of the MOS transistor. It contains four mismatch parameters, the threshold voltage and the drain current. The model is very flexible in its use.
7 citations