H
Hideaki Takayanagi
Researcher at Tokyo University of Science
Publications - 252
Citations - 7038
Hideaki Takayanagi is an academic researcher from Tokyo University of Science. The author has contributed to research in topics: Superconductivity & Josephson effect. The author has an hindex of 36, co-authored 249 publications receiving 6720 citations. Previous affiliations of Hideaki Takayanagi include Nippon Telegraph and Telephone & Niigata University.
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Readout of the qubit state with a dc-SQUID
TL;DR: In this article, the states of a flux qubit with three Josephson junctions were observed with a dc-SQUID for single-shot detection of macroscopic quantum superposition.
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Fabrication of SQUIDs with Nb/Ru/Sr2RuO4 junctions
Ryosuke Ishiguro,M. Yakabe,Taketomo Nakamura,E Watanabe,Daiju Tsuya,H. Oosato,Y. Maeno,Hideaki Takayanagi,Hideaki Takayanagi +8 more
TL;DR: In this paper, the superconducting loop of a Nb-Sr2RuO4 hybrid dc-SQUID is composed of Nb, Ru and two Nb/Ru/Sr 2 RuO4 junctions.
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Superconducting proximity effect and reentrant behaviors in random network carbon nanotubes
Yuan Liang Zhong,Yuan Liang Zhong,Yuan Liang Zhong,Hayato Nakano,Tatsushi Akazaki,Kenichi Kanzaki,Yoshihiro Kobayashi,Hideaki Takayanagi +7 more
TL;DR: In this paper, the superconducting proximity effect in a sandwich structure of network-like carbon nanotubes coupled to NbN electrodes was investigated, which gives rise to multiple Andreev reflection processes and enhanced magnetoconductance fluctuations.
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Superconducting transition of Ru in SQUIDs with Nb/Ru/Sr2RuO4 junctions
Yusuke Nago,Ryosuke Ishiguro,Toshihiro Sakurai,M. Yakabe,Terutaro Nakamura,Shingo Yonezawa,Satoshi Kashiwaya,Hideaki Takayanagi,Hideaki Takayanagi,Yoshiteru Maeno +9 more
TL;DR: In this paper, the authors measured transport properties and magnetic responses of direct current superconducting quantum interference devices (dc-SQUIDs) with Nb/Ru/Sr2RuO4-Ru eutectic crystal.
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InAs-inserted-channel InAlAs/InGaAs inverted HEMTs with superconducting electrodes
TL;DR: In this paper, the authors investigate the device characteristics of InAs-inserted-channel inverted high electron mobility transistors (HEMTs) with superconducting Nb electrodes, and they show that this ohmic contact formation will allow them to utilize in this device both the improved HEMT characteristics and the superior performance of super-conducting electrodes.