An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A system and method for combining power from DC power sources. Each power source is coupled to a converter. Each converter converts input power to output power by monitoring and maintaining the input power at a maximum power point. Substantially all input power is converted to the output power, and the controlling is performed by allowing output voltage of the converter to vary. The converters are coupled in series. An inverter is connected in parallel with the series connection of the converters and inverts a DC input to the inverter from the converters into an AC output. The inverter maintains the voltage at the inverter input at a desirable voltage by varying the amount of the series current drawn from the converters. The series current and the output power of the converters, determine the output voltage at each converter.

Distributed Power Harvesting Systems Using DC Power Sources

A monitoring system and method for monitoring performance of individual powers sources in a distributed power source system A monitoring module is coupled to each of the power sources, or to each string of serially connected power sources, to monitor and collect data regarding current, voltage, temperature and other environmental factors at the power source The collected data is transmitted over a power line to a central analysis station for analysis Data collected from each source indicates malfunction or degradation at the source Comparison of data collected from adjacent sources filters for environmental factors impacting neighboring sources such as cloudy days for a solar panel Comparison of data collected from the same source at different times indicates soiling or degradation of the source with time or periodic events such as a moving shade from an adjacent building

Monitoring of Distributed Power Harvesting Systems Using DC Power Sources

Method for distributed power harvesting using DC power sources

A nonvolatile memory cell comprising a diode formed of semiconductor material can store memory states by changing the resistance of the semiconductor material by application of a set pulse (decreasing resistance) or a reset pulse (increasing resistance.) In preferred embodiments, set pulses are applied with the diode under forward bias, while reset pulses are applied with the diode in reverse bias. By switching resistivity of the semiconductor material of the diode, a memory cell can be either one-time programmable or rewriteable, and can achieve two, three, four, or more distinct data states.

Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance

A semiconductor integrated circuit unit, suitable for the control of a motor, has an integrated structure within the same semiconductor substrate, comprising an inverter circuit, drive circuits for driving the switching elements of the inverter circuit, an internal power source circuit for supplying power to the drive circuits which drive the upper arm side of the inverter circuit, and a logical circuit for transmitting a signal to the drive circuits which drive the upper arm side of the inverter circuit.

Semiconductor integrated circuit unit

A semiconductor device has a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density JF is passed into the second diodes, the relation ##EQU1## is established in a forward voltage VF range of 0.1 (V) to 0.3 (V), where k represents the Boltzmann constant, T represents the absolute temperature, and q represents the quantity of electron charges. The first diode is constituted by a first semiconductor region of one conductive type and a second semiconductor region of the other conductive type provided so as to be adjacent to the first semiconductor region to form a pn junction, so as to be in ohmic contact with one main electrode, and so as to have an impurity concentration higher than that of the first semiconductor region, and the second diode is constituted by the first semiconductor region of the one conductive type and a third semiconductor region of the other conductive type provided so as to be adjacent to the first semiconductor region to form a pn junction, so as to be in contact through a Schottky barrier with the one main electrode, and so as to have an impurity concentration higher than the first semiconductor region.

Semiconductor schottky device with pn regions

A semiconductor device is provided wherein a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction are provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density J F is passed into the second diode, the relation ##EQU1## is established in a forward voltage V F range of 0.1 (V) to 0.3 (V), where k represents the Boltzmann constant (≈1.38×10 -23 J/K), T represents the absolute temperature, and q represents the quantity of electron charges (≈1.6×10 -19 C). The first diode can have a first semiconductor region of one conductivity type and a second semiconductor region of the other conductivity type adjacent to the first semiconductor region to form a pn junction therebetween, so as to be in ohmic contact with one main electrode, and so as to have an impurity concentration higher than that of the first semiconductor region. The second diode can be formed by the first semiconductor region of the one conductivity type and a third semiconductor region of the other conductivity type analogously as above.

Semiconductor Schottky barrier device with pn junctions

A semiconductor device includes a diode having a Schottky barrier and a MOS transistor integrally formed in one and the same semiconductor substrate in which the diode and MOS transistor have their main electrode in common use. The diode has a first diode portion having a pn junction in a current-passing direction and a second diode portion having a combination of the Schottky barrier and another pn junction in the current passing direction.

Composite semiconductor device with Schottky and pn junctions

In a semiconductor device a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction are provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density J F is passed into the second diodes, the relation is established in a forward voltage V F range of 0.1 (V) to 0.3 (V). The first diode is constituted by first and second semiconductor regions (13, 15) forming a pn junction therebetween, the second being in ohmic contact with one main electrode (3), and having an impurity concentration higher than that of the first semiconductor region (13). The second diode is constituted by first and third semiconductor regions (13, 16) forming a pn junction therebetween, the third being in contact through a Schottky barrier with the one main electrode (3) and having an impurity concentration higher than the first semiconductor region (13).

Hidetoshi Arakawa

Papers

Semiconductor integrated circuit unit

Semiconductor schottky device with pn regions

Semiconductor Schottky barrier device with pn junctions

Composite semiconductor device with Schottky and pn junctions

High-speed diode and method for producing the same