An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base layer of the second conductivity type, and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode is disposed, through a gate insulating film, in a trench adjacent to the main cell. A buffer resistor having an infinitely large resistance value is inserted between the buffer layer and emitter electrode. The dummy cell is provided with an inhibiting structure to reduce carriers of the second conductivity type to flow to and accumulate in the buffer layer from the collector layer.

Power semiconductor device

To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.

Light-emitting device and manufacturing method thereof

A system and method for combining power from DC power sources. Each power source is coupled to a converter. Each converter converts input power to output power by monitoring and maintaining the input power at a maximum power point. Substantially all input power is converted to the output power, and the controlling is performed by allowing output voltage of the converter to vary. The converters are coupled in series. An inverter is connected in parallel with the series connection of the converters and inverts a DC input to the inverter from the converters into an AC output. The inverter maintains the voltage at the inverter input at a desirable voltage by varying the amount of the series current drawn from the converters. The series current and the output power of the converters, determine the output voltage at each converter.

Distributed Power Harvesting Systems Using DC Power Sources

The light-emitting element of the present invention includes a light-emitting layer and a layer for controlling movement of carriers between a pair of electrodes. The layer for controlling movement of carriers includes a first organic compound having a carrier transporting property and a second organic compound for reducing the carrier transporting property of the first organic compound, and the second organic compound is dispersed in the first organic compound. The layer for controlling movement of carriers is provided in such a manner, whereby change in carrier balance with time can be suppressed. Therefore, a light-emitting element having a long lifetime can be obtained.

Light-emitting element, light-emitting device, and electronic device

A semiconductor integrated circuit unit, suitable for the control of a motor, has an integrated structure within the same semiconductor substrate, comprising an inverter circuit, drive circuits for driving the switching elements of the inverter circuit, an internal power source circuit for supplying power to the drive circuits which drive the upper arm side of the inverter circuit, and a logical circuit for transmitting a signal to the drive circuits which drive the upper arm side of the inverter circuit.

Semiconductor integrated circuit unit

A trench gate type semiconductor device with a current sensing cell is composed so that the orientation of crystal face at side walls of trenches forming channels of trench gates in a main cell is equal or almost equal, or equivalent or almost equivalent to the orientation of crystal face at side walls of trenches forming channels of trench gates in a current sensing cell, which brings the same performance to the main and sense cells, whereby the high accuracy current sensing can be realized.

Trench gate type semiconductor device with current sensing cell

A computer file system, in which directory files and real files are organized in a tree structure, includes data items which are recorded in a high-ranking directory file in the tree structure, a high-ranking file management table which records file management data indicative of the assignment relation with low-ranking directory files or real files created below the high-ranking directory file, and a low-ranking file management data which is stored in any of the low-ranking directory files and indicative of the assignment relation between the low-ranking directory file and other low-ranking directory files or real files. The system further includes an assignment relation copy device which copies the file management data of a high-ranking or low-ranking file management table indicative of the assignment relation between the high-ranking or low-ranking directory files or real files into another high-ranking or low-ranking file management table.

Computer file system

A semiconductor device has a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density JF is passed into the second diodes, the relation ##EQU1## is established in a forward voltage VF range of 0.1 (V) to 0.3 (V), where k represents the Boltzmann constant, T represents the absolute temperature, and q represents the quantity of electron charges. The first diode is constituted by a first semiconductor region of one conductive type and a second semiconductor region of the other conductive type provided so as to be adjacent to the first semiconductor region to form a pn junction, so as to be in ohmic contact with one main electrode, and so as to have an impurity concentration higher than that of the first semiconductor region, and the second diode is constituted by the first semiconductor region of the one conductive type and a third semiconductor region of the other conductive type provided so as to be adjacent to the first semiconductor region to form a pn junction, so as to be in contact through a Schottky barrier with the one main electrode, and so as to have an impurity concentration higher than the first semiconductor region.

Semiconductor schottky device with pn regions

A lateral insulated-gate bipolar transistor has a drift region having therein a base layer and a collector layer. An emitter layer is formed in the base layer. A gate electrode structure, comprising a control electrode and gate insulating layer, contacts the base layer, and also contacts the drift layer and the emitter layer. An emitter electrode contacts the emitter layer, and also the base layer, and a collector electrode contacts the collector layer. The emitter and collector electrodes are elongate and the ratio of their resistances per unit length is in the range of 0.5 to 2.0. This reduces the possibility of a localized high current density along the electrodes, thereby reducing the risk of latch-up due to parasitic thyristors. The collector and emitter electrodes may be of the same width and thickness, or of different widths and thicknesses, or may each have an auxiliary part (for example, in a multi-layer wiring arrangement), so that their resistances per unit length are in the desired range. A plurality of such transistors may be fabricated together in an array.

Naoki Sakurai

Papers

Semiconductor integrated circuit unit

Trench gate type semiconductor device with current sensing cell

Computer file system

Semiconductor schottky device with pn regions

Lateral insulated gate bipolar transistor