Patent
Semiconductor schottky device with pn regions
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TLDR
In this paper, the first diode is constituted by a first semiconductor region of one conductive type and another conductive region of the other conductive kind provided so as to be in contact through a Schottky barrier with the one main electrode.Abstract:
A semiconductor device has a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density JF is passed into the second diodes, the relation ##EQU1## is established in a forward voltage VF range of 0.1 (V) to 0.3 (V), where k represents the Boltzmann constant, T represents the absolute temperature, and q represents the quantity of electron charges. The first diode is constituted by a first semiconductor region of one conductive type and a second semiconductor region of the other conductive type provided so as to be adjacent to the first semiconductor region to form a pn junction, so as to be in ohmic contact with one main electrode, and so as to have an impurity concentration higher than that of the first semiconductor region, and the second diode is constituted by the first semiconductor region of the one conductive type and a third semiconductor region of the other conductive type provided so as to be adjacent to the first semiconductor region to form a pn junction, so as to be in contact through a Schottky barrier with the one main electrode, and so as to have an impurity concentration higher than the first semiconductor region.read more
Citations
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References
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Proceedings ArticleDOI
"The merged P-I-N Schottky (MPS) rectifier: A high-voltage, high-speed power diode"
TL;DR: In this article, the MPS rectifier for high voltage, high frequency power switching applications has been obtained by the fabrication of devices with aluminum Schottky barriers, which exhibit a 6 to 8 fold smaller reverse recovery stored charge and operate at 1.5 to 3 times the forward current density when compared with the P-I-N rectifier.
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Semiconductor Schottky devices having improved voltage blocking characteristics
TL;DR: In this article, the dopant concentration of the field-relief regions at the surface where contacted by the metal-based layer is sufficiently low as to form a further Schottky barrier with the metal based layer.
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TL;DR: In this paper, the authors proposed to obtain a diode having high performance by dispersing and disposing a P type layer on one side surface of a high resistance Ni-type Si substrate and an N type surface on the other side surface, respectively forming a Ptype layer having less than 1/3 of the thickness on the P type and the N type layer with less than 2 1/2 of thickness on exposed Ni type layer, and diffusing Au from both sides.
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Schottky barrier semiconductor device
TL;DR: In this article, the authors proposed a multilayer electrode with first, second, third and fourth metal layers adjacent to a semiconductor region, and forming the second metal layer of Al.
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P-n junction type rectifying diode
TL;DR: In this article, the authors proposed a diode which has preferable reverse characteristics and low positive voltage drop by coating a P type layer in island shape on an N type layer on an n type layer and coating Pt thereon.