Catalytic removal of NO

Since the breakthrough by Kodak in 1987, organic light-emitting diodes (OLEDs) have been seen as one of the most promising technologies for future displays. A number of materials have been developed and improved in order to fulfil the requirements of this application. The materials differ from one another by their structure but also by the mechanism involved in the electroluminescence produced (fluorescence versus phosphorescence). When properly stacked, these materials result in a device that can achieve the required high efficiency and long lifetime. Such red, green and blue devices can then be combined in matrices to become the core of a display. Building up these structures onto a display backplane is one of the challenges facing the industry. The circuitry for driving the pixels can be adapted to the OLED, sometimes at the expense of the simplicity of the display, but bearing in mind that the fabrication process must remain industrially viable.  2006 Society of Chemical Industry

/pdf/organic-light-emitting-diode-oled-technology-materials-yh9wkre0li.pdf

Organic light-emitting diode (OLED) technology: materials, devices and display technologies

http://w0.rz-berlin.mpg.de/hjfdb/pdf/172e.pdf

Surface chemistry of carbon dioxide

Electrocatalysis by ad-atoms

Molecular beam experiments on model catalysts

We have investigated the crystallization of a-Si films by means of pulsed KrF excimer laser annealing as a function of irradiation energy density (E L), using transmission electron microscopy (TEM), Raman scattering spectroscopy and secondary ion mass spectrometry (SIMS). The grain size increased gradually at 0.2–0.4 J/cm2, while a drastic enlargement of grains occurred with lateral growth at 0.6–0.8 J/cm2. The stress in the films decreased with a decrease in the thickness of the fine grain (FG) layer until the FG layer finally disappeared. We proposed a model in which a drastic enlargement of grains at high E L is controlled by the nucleation rate, the solidification velocity, and the nucleus density of initial growth. It was found that poly-Si films with large grains ( 0.5–0.9 µm), high purity of C ( ~3×1016 cm-3) and low stress were obtained in the high E L regime ( 0.6–0.8 J/cm2).

https://iopscience.iop.org/article/10.1143/JJAP.33.4491/pdf

Hirofumi Miki

Papers

Crystallization Process of Polycrystalline Silicon by KrF Excimer Laser Annealing

Chemisorption of NO on Pd(100), (111) and (110) surfaces studied by AES, UPS and XPS

Adsorption and dissociation of NO on Pt(100) and (310) studied by AES, UPS and XPS

Coadsorption of carbon monoxide and hydrogen on polycrystalline rhodium

Adsorption and decomposition of NO on Pt (112)