Journal ArticleDOI
Crystallization Process of Polycrystalline Silicon by KrF Excimer Laser Annealing
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TLDR
In this article, the authors investigated the crystallization of a-Si films by means of pulsed KrF excimer laser annealing as a function of irradiation energy density (E L), using transmission electron microscopy, Raman scattering spectroscopy and secondary ion mass spectrometry (SIMS).Abstract:
We have investigated the crystallization of a-Si films by means of pulsed KrF excimer laser annealing as a function of irradiation energy density (E L), using transmission electron microscopy (TEM), Raman scattering spectroscopy and secondary ion mass spectrometry (SIMS). The grain size increased gradually at 0.2–0.4 J/cm2, while a drastic enlargement of grains occurred with lateral growth at 0.6–0.8 J/cm2. The stress in the films decreased with a decrease in the thickness of the fine grain (FG) layer until the FG layer finally disappeared. We proposed a model in which a drastic enlargement of grains at high E L is controlled by the nucleation rate, the solidification velocity, and the nucleus density of initial growth. It was found that poly-Si films with large grains ( 0.5–0.9 µm), high purity of C ( ~3×1016 cm-3) and low stress were obtained in the high E L regime ( 0.6–0.8 J/cm2).read more
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Organic light-emitting diode (OLED) technology: materials, devices and display technologies
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Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
TL;DR: In this paper, a technique involving localized irradiation of the film with one or several pulses of a beam of laser radiation, locally to melt the film through its entire thickness, is described.
Journal ArticleDOI
Laser–Material Interactions for Flexible Applications
Daniel J. Joe,Seung Jun Kim,Jung-Hwan Park,Dae Yong Park,Han Eol Lee,Tae Hong Im,Insung S. Choi,Rodney S. Ruoff,Keon Jae Lee +8 more
TL;DR: Recent advances in laser-material interactions for inorganic-based flexible applications with regard to both materials and processes are presented.
Patent
Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification
TL;DR: In this paper, a method for processing an amorphous silicon thin film sample into polycrystalline silicon thin films is described, which includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in a sequence in a predetermined plane, masking portions of each homogeneous fluence controlled laser pulse with a two dimensional pattern of slits, and controllable sequentially translating a relative position of the sample with respect to each of
PatentDOI
Line scan sequential lateral solidification of thin films
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TL;DR: In this paper, an improved method of sequential lateral solidification of crystalline semiconductor film is presented, which consists of using a pulse laser to create two distinct zones of molten crystals.
References
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Journal ArticleDOI
Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation
Michael Thompson,G. J. Galvin,James W. Mayer,Paul S. Peercy,J. M. Poate,Dale C. Jacobson,A. G. Cullis,N. G. Chew +7 more
TL;DR: In this article, it was shown that amorphous Si melts at a temperature at least 50 K below the crystalline value, and the initial liquid layer solidifies to form coarse-grained polycrystalline Si.
Journal ArticleDOI
Effect of static uniaxial stress on the Raman spectrum of silicon
TL;DR: In this article, the effects of static uniaxial stress on the frequency of the q ≈ 0 optical phonons in a diamond-type crystal were investigated and the results were in reasonable agreement with lattice dynamical theory.
Journal ArticleDOI
Heat of crystallization and melting point of amorphous silicon
TL;DR: In this article, the authors measured the heat of crystallization, ΔHac, to be 11.9±0.7 kJ/mol, substantially less than the value predicted by scaling ΔHAC of a•Ge.
Journal ArticleDOI
Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy
TL;DR: In this paper, Raman spectroscopy is used to determine built-in stresses in silicon on sapphire (SOS) devices, which can be applied at various temperatures.
Journal ArticleDOI
Excimer‐laser‐induced crystallization of hydrogenated amorphous silicon
TL;DR: In this paper, the electronic transport properties and structural morphology of fast-pulse excimer-laser crystallized hydrogenated amorphous silicon (a•Si:H) thin films have been measured.
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