Patent
Thin film transistor and manufacturing method thereof
Mamoru Furuta,Takashi Hirao,Hiroshi Furuta,Tokiyoshi Matsuda,Takahiro Hiramatsu,Hiromitsu Ishii,Hitoshi Hokari,Motohiko Yoshida +7 more
TLDR
In this article, a pair of low-resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes, and an oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of LRS thin films and extends along the gap defined between the low-Resistance thin films so as to function as a channel.Abstract:
A thin film transistor includes a substrate (1, 11) , and a pair of source/drain electrodes (2, 14) (i.e. , a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films (10, 20) are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer (3, 15) is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.read more
Citations
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Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
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Hajime Kimura,Shunpei Yamazaki +1 more
TL;DR: In this paper, a connection terminal portion is provided with a plurality of connection pads which are part of the connection terminal, each of which includes a first connection pad and a second connection pad having a line width different from that of the first one.
Patent
Field-effect transistor and method for manufacturing the same
TL;DR: A method for manufacturing a field effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium, forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or Deuterium is added as discussed by the authors.
Patent
Transparent conductive film and method for manufacturing the same
TL;DR: In this article, a transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions.
Patent
Thin film transistor array panel and manufacturing method thereof
TL;DR: In this paper, a method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on an insulating substrate, forming an gate insulating layer, forming a semiconductor layer, and forming a data conductive layer including a data line and a drain electrode; depositing a passivation layer; forming a photoresist including a first portion located on an end portion of the gate line, a second portion thicker than the first portion and located on the drain electrode, and a third portion larger than the second portion.
References
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Patent
Transistor and semiconductor device
Masashi Kawasaki,Hideo Ohno +1 more
TL;DR: In this article, a transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like, and a transparent electrode is used for all of a source, a drain and a gate.
Patent
Thin-film transistor
Tomoji Kawai,Kitamura Takeshi,Satoshi Masuda,Shigehiro Miyatake,Yoshihiro Okumura,Hitoshi Tabata,健 北村,敏 増田,佳弘 奥村,茂博 宮武,知二 川合,仁 田畑 +11 more
TL;DR: In this paper, a thin film transistor with a ZnO film as active layer is presented, which suppresses a leak current of a gate insulating film and obtains good transistor characteristics.
Patent
Manufacturing method of transistor array substrate, and transistor array substrate
Ikuhiro Yamaguchi,郁博 山口 +1 more
TL;DR: In this paper, the authors proposed a method to simplify a manufacturing process of a transistor array substrate without reducing the numerical aperture of a pixel by using a mask to etch the impurity doped metallic oxide film.
Patent
Semiconductor device and its manufacturing method
TL;DR: In this paper, the authors proposed a method to obtain a highly reliable semiconductor device and its manufacturing method by avoiding the risk of any movement of a heat dissipation block, any deformation of bonding wire and any penetration of resin around the front surface of the heat sink in packaging and by enabling stable bonding and stable wire bonding between a heat sink and a lead.
Patent
Thin film transistor and matrix display
TL;DR: In this article, a gate insulation film 4 consisting of a first insulation film and a second insulation film (for example, SiO2 ) is formed on a gate electrode, and a semiconductor layer 5 formed of ZnO or the like is formed.