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Hiroshi Nishiyama

Researcher at Nagaoka University of Technology

Publications -  51
Citations -  1039

Hiroshi Nishiyama is an academic researcher from Nagaoka University of Technology. The author has contributed to research in topics: Catalysis & Oxide. The author has an hindex of 15, co-authored 51 publications receiving 989 citations.

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Photocatalytic Activity for Water Decomposition of Indates with Octahedrally Coordinated d10 Configuration. I. Influences of Preparation Conditions on Activity

TL;DR: In this article, the photocatalytic properties for water decomposition of RuO2-dispersed alkaline earth metal and lanthanum indates with an octahedrally coordinated In3+ ion of d10 configuration were studied.
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Photocatalytic water decomposition by RuO2-loaded antimonates, M2Sb2O7 (M=Ca, Sr), CaSb2O6 and NaSbO3, with d10 configuration

TL;DR: In this article, the photocatalytic activity for water decomposition of alkaline earth metal and alkaline metal antimonates, M 2 Sb 2 O 7 (M = Ca, Sr), CaSh 2 O 6 and NaSbO 3, was investigated.
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Photocatalytic activities for water decomposition of RuO2-loaded AInO2 (A = Li, Na) with d10 configuration

TL;DR: In this article, the photocatalytic activities for water decomposition of RuO2-loaded alkaline metal indates, AInO2 (A=Li, Na), with d10 configuration were studied.
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Overall splitting of water by RuO2-loaded PbWO4 photocatalyst with d10s2-d0 configuration

TL;DR: In this article, a tetrahedron PbWO4, consisting of a WO4 tetrahedral, showed high and stable photocatalytic activity for the overall splitting of water, producing a stoichiometric quantity of H2 and O2 under UV irradiation when loading RuO2 on the metal oxide.
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Effects of divalent metal ion (Mg2+, Zn2+ and Be2+) doping on photocatalytic activity of ruthenium oxide-loaded gallium nitride for water splitting

TL;DR: In this article, the effects of divalent metal ion ion doping on the photocatalytic activity of GaN powder for overall water splitting were studied, and the role of ion dopants was concluded to produce p-type GaN, which was able to increase the concentration and mobility of holes.