Showing papers by "Hiroyuki A. Sakaue published in 2005"
TL;DR: In this paper, a novel electron beam ion source was developed for nanoprocesses using highly charged ions, which optimized the efficiency of ion production and extraction based on the trajectory calculations of electrons and ions traveling through the ion source.
Abstract: A novel electron beam ion source was developed for nanoprocesses using highly charged ions. The ion source was designed to optimize the efficiency of ion production and extraction based on the trajectory calculations of electrons and ions traveling through the ion source. A commercial super-conducting magnet (Helmholz coils, 3 T) cooled by a closed-cycle refrigerator is used to reduce the operating costs. The separate vacuum chambers design enables 250°C baking of electrodes in the ion source to realize ultrahigh vacuum condition by removing the magnet chamber without venting.
7 citations
01 Jul 2005-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this paper, an electron bean ion source is designed to produce nanostructure on various materials, and is the key tool to realize single ion implantation technique using a discrete superconducting magnet cooled by a closed cycle refrigerator.
Abstract: Highly charged ion is useful to produce nanostructure on various materials, and is key tool to realize single ion implantation technique. On such demands for the application to nanotechnology, we have designed an electron bean ion source. The design stresses on the volume of drift tubes where highly charged ions are confined and the efficiency of ion extraction from the drift tube through collector electrode in order to obtain intense ion beam as much as possible. The ion source uses a discrete superconducting magnet cooled by a closed-cycle refrigerator in order to reduce the running costs and to simplify the operating procedures. The electrodes of electron gun, drift tubes, and collector are enclosed in ultrahigh vacuum tube that is inserted into the bore of the magnet system.
5 citations
TL;DR: In this article, the contact resistance between Si substrates and P-doped poly-Si films was investigated using a vacuum loadlock system with various wafer transfer environments, and it was found that the surface treated with plasma dry cleaning was analyzed by secondary-ion mass spectroscopy (SIMS) and X-ray photoelectron spectrograph (XPS) and was found to be terminated by SiOxFy or SiFx, which suppressed the formation of an interface oxide and the adsorption of organic compounds.
Abstract: The contact resistance between Si substrates and P-doped poly-Si films was investigated using a vacuum loadlock system with various wafer transfer environments. When compared to that in air atmosphere, the contact resistance was reduced by 40% and 50% in nitrogen atmosphere and under vacuum, respectively. Furthermore, the use of a plasma dry cleaning method to remove the native oxide before P-doped poly-Si deposition decreased the contact resistance by 60% compared with that in air. The surface treated with plasma dry cleaning was analyzed by secondary-ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS) and was found to be terminated by SiOxFy or SiFx, which suppressed the formation of an interface oxide and the adsorption of organic compounds.