H
Hiroyuki Okuyama
Researcher at Sony Broadcast & Professional Research Laboratories
Publications - 115
Citations - 4032
Hiroyuki Okuyama is an academic researcher from Sony Broadcast & Professional Research Laboratories. The author has contributed to research in topics: Layer (electronics) & Semiconductor. The author has an hindex of 29, co-authored 115 publications receiving 4012 citations.
Papers
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Patent
Semiconductor light emitting device and fabrication method thereof
TL;DR: Semiconductor light emitting devices and methods of producing same are provided in this article, where a substrate has a surface including a difference-in-height portion composed of a wurtzite compound.
Patent
Selective growth method, and semiconductor light emitting device and fabrication method thereof
Goshi Biwa,Hiroyuki Okuyama +1 more
TL;DR: In this article, the active layer has multiple quantum wells and a source supplied to the non-growth region is incorporated in the deposited crystal from the initial stage of growth, so that the supplied amount of the source to the active-layer selective growth region is kept nearly at a constant value over the entire period of growth.
Patent
Nitride semiconductor element and production method for nitride semiconductor element
TL;DR: In this paper, a nitride semiconductor element having an electrode layer (21) formed via a high-resistance region such as an undoped gallium nitride layer (17) on the upper layer of a crystal layer having a side surface (16s) and the upper layers (16t) having a poor crystallinity.
Patent
Semiconductor light-emitting device and semiconductor light-emitting device
TL;DR: In this paper, a light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity.
Journal ArticleDOI
Room temperature continuous operation of blue-green laser diodes
Norikazu Nakayama,S. Itoh,Toyoharu Ohata,K. Nakano,Hiroyuki Okuyama,Masafumi Ozawa,Akira Ishibashi,Masao Ikeda,Yoshifumi Mori +8 more
TL;DR: In this paper, continuous-wave operation in wide-gap II-VI semiconductor current injection laser diodes at room temperature has been demonstrated for the first time, at a wavelength of 523.5 nm with a threshold current of 45 mA (1.4 kA/cm2).