Akira Ishibashi

TL;DR: By reducing the dark-spot density to <3/spl times/10/sup 3/ cm/sup -2, a device lifetime exceeding 100 h has been obtained for a ZnCdSe-ZnSSe -ZnMgSSe single quantum well separate-confinement heterostructure laser diode (LD) under room temperature continuous-wave operation with a constant light output power of 1 mW as mentioned in this paper.

TL;DR: In this paper, continuous-wave operation in wide-gap II-VI semiconductor current injection laser diodes at room temperature has been demonstrated for the first time, at a wavelength of 523.5 nm with a threshold current of 45 mA (1.4 kA/cm2).

TL;DR: In this article, a II-VI laser diode lifetime of >140 h at 40/spl deg/C, as well as /spl sim/400 h at 20/spl dc/C with a constant output power of 1 mW was achieved for a ZnCdSe-ZnSSe-znMgSSe separate-confinement heterostructure diode under continuous-wave operation.

TL;DR: In this article, a semiconductor apparatus is disclosed, in which the entire or part of an electron active region is formed by a superlattice structure semiconductor layer in which a plurality of different semiconductor layers, less than 8 monolayers, and containing a fraction or a binary compound semiconductors layers are alternately and epitaxially grown and a main current direction is selected to be in the direction perpendicular to the laminae of said super lattice layers.

TL;DR: In this article, the band-gap energy of II-VI compound semiconductors was calculated using a modified dielectric theory and the calculated bandgap energies of MgS and MgSe were 4.62 and 3.67 eV.