Probing the Optical Property and Electronic Structure of TiO2 Nanomaterials for Renewable Energy Applications

Recent progress in synthesis, properties and potential applications of SiC nanomaterials

Low-dimensional SiC nanostructures: Fabrication, luminescence, and electrical properties

Auger parameter and Wagner plot in the characterization of chemical states by X-ray photoelectron spectroscopy: a review

Oxygen plasma treatment of indium tin oxide (ITO) results in a change in work function and electron affinity by ∼0.5 eV. This change correlates with the measured increase in injected current in simple “hole-only” organic devices with O-plasma treated ITO electrodes. Neither addition nor removal of surface hydroxyl functionality accounts for the observed work function and electron affinity changes. X-ray and ultraviolet photoelectron spectroscopies show a new type of oxygen species is formed. Oxidation of surface Sn-OH to surface Sn-O• units is proposed to account for the observed changes in O-plasma treated ITO; this proposal can explain a wide variety of previously described ITO surface activation results.

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Surface oxidation activates indium tin oxide for hole injection

Single-phase silicon carbide (SiC) nanotubes were successfully synthesized by the reaction of carbon nanotubes with silicon powder at 1200°C for 100 h. X-ray diffraction patterns indicated that most of the carbon from the carbon nanotubes that were reacted with silicon at 1200°C for 100 h was transformed to SiC. Transmission electron microscopy observations revealed that both single-phase SiC nanotubes and C–SiC coaxial nanotubes, which are carbon nanotubes sheathed with a SiC layer, were synthesized after 100 h of reaction. The ratio of single-phase SiC nanotubes to C–SiC nanotubes increased with heat treatment at 600°C in air for 1 h because the remaining carbon was removed.

Synthesis of Silicon Carbide Nanotubes

Preparation conditions of single-phase SiC nanotubes and C-SiC coaxial nanotubes were investigated. The characterization of single-phase SiC nanotubes and C-SiC coaxial nanotubes were carried out. The SiC nanowires, which were made of the catenated SiC grains of 50–200 nm in diameter, were obtained in carbon nanotubes reacted at 1450 °C. The only C-SiC coaxial nanotubes were formed at 1300 °C. A few single-phase SiC nantoubes were synthesized at 1200 °C for 100 h. More than half number of nanotubes reacted at 1200 °C for 100 h were altered to single-phase SiC nantoubes by heat treatment of 600 °C for 1 h in air since the remained carbon was removed. The energy dispersive X-ray spectroscopy analysis revealed that the atomic ratio of Si to C in single-phase SiC nanotubes was almost 1; these single-phase SiC nanotubes consisted of near-stoichiometric SiC grains.

Preparation and characterization of single-phase SiC nanotubes and C-SiC coaxial nanotubes

P and S K-edge XANES of transition-metal phosphates and sulfates

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Statistical hypothesis test of factor loading in principal component analysis and its application to metabolite set enrichment analysis

The Auger-decay processes in solid ${\mathrm{SiO}}_{2}$ after resonant and off-resonant excitations around the Si 1s edge have been investigated using synchrotron radiation. It was found that the Si ${\mathit{KL}}_{2,3}$${\mathit{L}}_{2,3}$ Auger line splits into two peaks when the photon energy is close to that of the Si 1s\ensuremath{\rightarrow}3p resonance. These two peaks are ascribed to the normal and resonant Auger-decay processes. It was also observed that the resonant Auger peak is shifted to higher energy in proportion to the photon energy. The resonant Auger peak is attributed to the spectator Auger decay following the Si 1s\ensuremath{\rightarrow}3p excitation. The energy shift of the resonant Auger electron is interpreted in terms of the energy transfer from the excited electron in the conduction band to the Auger electron in the course of the Auger-decay process.

Hiroyuki Yamamoto

Papers

Synthesis of Silicon Carbide Nanotubes

Preparation and characterization of single-phase SiC nanotubes and C-SiC coaxial nanotubes

P and S K-edge XANES of transition-metal phosphates and sulfates

Statistical hypothesis test of factor loading in principal component analysis and its application to metabolite set enrichment analysis

Resonant Auger-decay process in solid SiO2 at the Si 1s edge.