H
Hisae Shimizu
Researcher at Canon Inc.
Publications - 23
Citations - 405
Hisae Shimizu is an academic researcher from Canon Inc.. The author has contributed to research in topics: Transistor & Threshold voltage. The author has an hindex of 9, co-authored 23 publications receiving 402 citations.
Papers
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Journal ArticleDOI
Fast Thin-Film Transistor Circuits Based on Amorphous Oxide Semiconductor
Masato Ofuji,Katsumi Abe,Hisae Shimizu,Nobuyuki Kaji,Ryo Hayashi,Masafumi Sano,Hideya Kumomi,Kenji Nomura,Toshio Kamiya,Hideo Hosono +9 more
TL;DR: In this paper, a five-stage ring oscillator composed of amorphous In/Ga/Zn/O (a-IGZO) channel thin-film transistors (TFTs) with the channel lengths of 10 mum were fabricated on a glass substrate.
Journal ArticleDOI
Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor
Hideya Kumomi,S. Yaginuma,Hideyuki Omura,Amita Goyal,Ayumu Sato,Masatoshi Watanabe,Mikio Shimada,Nobuyuki Kaji,Kenji Takahashi,Masato Ofuji,Tomohiro Watanabe,Naho Itagaki,Hisae Shimizu,Katsumi Abe,Yoshinori Tateishi,Hisato Yabuta,Tatsuya Iwasaki,Ryo Hayashi,Toshiaki Aiba,Masafumi Sano +19 more
TL;DR: In this article, the authors investigated the properties and performance of transparent amorphous-oxide semiconductors (TAOS) from materials to devices and circuits, and proposed a novel device structure where conductive alpha-IGZO regions work as the source and drain electrodes to the channel region of semiconductor alpha-IZO.
Patent
Method of treating semiconductor element
Masato Ofuji,Katsumi Abe,Hisae Shimizu,Ryo Hayashi,Masafumi Sano,Hideya Kumomi,Yasuyoshi Takai,Takehiko Kawasaki,Norio Kaneko +8 more
TL;DR: In this paper, a threshold voltage of a semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconducting element.
Patent
Method of driving transistor and device including transistor driven by the method
TL;DR: In this paper, the authors proposed a method of driving a transistor including a semiconductor layer, a first-layer, a second-layer and a third-layer such that the semiconductor layers are disposed between the first and second layers.
Patent
Laminated solid-state image pickup device
TL;DR: In this article, the authors proposed a laminated solid-state image pickup device, which includes accumulating portions for accumulating electric signals, reading units for reading the electric signals and connecting members formed in contact with the accumulating portions, and a photoconductive film.