H
Hisaki Kato
Researcher at Nagoya University
Publications - 6
Citations - 382
Hisaki Kato is an academic researcher from Nagoya University. The author has contributed to research in topics: Gallium nitride & Epitaxy. The author has an hindex of 5, co-authored 6 publications receiving 382 citations.
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Patent
Light emitting semiconductor device using gallium nitride group compound
Katsuhide Manabe,Akira Mabuchi,Hisaki Kato,Michinari Sassa,Norikatsu Koide,Shiro Yamazaki,Masafumi Hashimoto,Isamu Akasaki +7 more
TL;DR: In this paper, a light-emitting semiconductor device that includes a gallium nitride compound semiconductor (AlxGa1-xN) comprising an n-layer and an i-layer, at least one of them being of a double layer structure is presented.
Patent
Substrate for growing gallium nitride compound-semiconductor device and light emitting diode
TL;DR: A substrate for producing a gallium nitride compound-semiconductor (Al.su Ga1-x N; X=0 inclusive) device in vapor phase on a sapphire substrate using gaseous organometallic compound, and a also blue light emitting diode produced by using the substrate.
Patent
Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
Katsuhide Manabe,Akira Mabuchi,Hisaki Kato,Michinari Sassa,Norikatsu Koide,Shiro Yamazaki,Masafumi Hashimoto,Isamu Akasaki +7 more
TL;DR: In this paper, a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al x Ga 1-x N) is presented, in which the n-layer is of double-layer structure including an n − layer of low carrier concentration and an n + layer of high carrier concentration.
Patent
Method for manufacturing a gallium nitride group compound semiconductor
Katsuhide Manabe,Akira Mabuchi,Hisaki Kato,Michinari Sassa,Norikatsu Koide,Shiro Yamazaki,Masafumi Hashimoto,Isamu Akasaki +7 more
TL;DR: In this paper, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate 1 is exposed), where the GaN layer grows epitaxially and threedimensionally (not only in a vertical direction but also in a lateral direction) on the Al 0.15 Ga 0.85 N layer 2.