A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.

Nitride semiconductor light emitting device

Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer (33) formed of a metal between a semiconductor layer (20) and a bonding substrate (31). When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.

Light-emitting device and method of manufacturing the same

A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Nitride semiconductor device

A transition crystal structure is disclosed for providing a good lattice and thermal match between a layer of single crystal silicon carbide (25) and a layer of single crystal gallium nitride (24). The transition structure comprises a buffer formed of a first layer of gallium nitride and aluminum nitride (22), and a second layer of gallium nitride and aluminum nitride (23) adjacent to the first layer. The mole percentage of aluminum nitride in the second layer (23) is substantially different from the mole percentage of aluminum nitride in the first layer (22). A layer of single crystal gallium nitride (24) is formed upon the second layer of gallium nitride and aluminum nitride. In preferred embodiments, the buffer further comprises an epitaxial layer of aluminum nitride upon a silicon carbide substrate.

Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices

A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and which in exposure to said first, relatively shorter wavelength radiation, is excited to responsively emit second, relatively longer wavelength radiation. In a specific embodiment, monochromatic blue or UV light output from a light-emitting diode is down-converted to white light by packaging the diode with fluorescent organic and/or inorganic fluorescers and phosphors in a polymeric matrix.

Solid state white light emitter and display using same

Disclosed herein is a light-emitting semiconductor device that includes a gallium nitride compound semiconductor (AlxGa1-xN) comprising an n-layer and an i-layer, at least one of them being of a double layer structure. In one embodiment the n-layer has a double-layer structure including an n-layer of a low carrier concentration and an n+-layer of a high carrier concentration, the former being adjacent to the i-layer. In another embodiment, the i-layer has a double-layer structure including an iL-layer of a low impurity concentration containing p-type impurities in a comparatively low concentration and an iH-layer of a high impurity concentration containing p-type impurities in a comparatively high concentration, the former being adjacent to the n-layer. In still another embodiment, both of the n-layer and the i-layer have a double layer structure. Also disclosed is a method for producing the light-emitting semiconductor device which employs a vapor phase epitaxy. In one preferred method, an n-type gallium nitride compound semiconductor (AlxGA1-xN) having a controlled conductivity is produced from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas together with other raw material gases at a controlled mixing ratio.

Light emitting semiconductor device using gallium nitride group compound

PURPOSE: To increase blue light emitting intensity of a light emitting diode by forming a double layer structure of a low carrier concentration layer and a high carrier concentration layer sequentially from the side of connecting an N-type layer to an I-type layer, and forming a double layer structure of a low impurity concentration layer having relatively low concentration of P-type impurity and a high impurity concentration layer having relatively high concentration of P-type impurity sequentially from the side of connecting an I-type layer to an N-type layer. CONSTITUTION: A sapphire board 1 is vapor etched, an AlN buffer layer 2 is formed, a high carrier concentration layer 3 made of GaN is formed, and then an N + type low carrier concentration layer 4 made of GaN is formed. Then, a low impurity concentration IL layer 5 of relatively low concentration (5×10 19 /cm 3 ) of Zn concentration made of GaN is formed, and then a high impurity concentration IH layer 6 of relatively high concentration (2×10 20 /cm 3 ) of Zn concentration made of GaN is formed. COPYRIGHT: (C)1991,JPO&Japio

Light emitting element of gallium nitride compound semiconductor

Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al x Ga 1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Al x Ga 1-x N) is of double-layer structure including an n-layer of low carrier concentration and an n + -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al x Ga 1-x N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i L -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i H -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al x Ga 1-x N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer

PROBLEM TO BE SOLVED: To connect and fix a semiconductor laser diode to a lead frame and heat sink accurately and without fail, by a method wherein a p-type electrode is connected to the exposed part of flat top of a laser resonator and formed on an insulating protective film, and an n-type electrode is formed on the second part region on the surface of a semiconductor. SOLUTION: Photoresist is uniformly applied to the upper surface of the top layer of gallium nitride compound semiconductor layer diode which is composed of a sapphire substrate 101, an n-type gallium nitride compound semiconductor layer 102, an active layer 103, and a p-type gallium nitride compound semiconductor layer 104, etc. After the photoresist is removed and an etching mask 201 is formed, they are dry-etched and the etching mask 201 is removed. Then, an insulating protective film 110 is formed on the upper exposed part of the first part region. The part where the junction part of the p-electrode 105 of a resonator flat part, and the part where an n-electrode 106 of the second part region is formed, are exposed by wet etching. Then, a p-electrode and an n-electrode 106 are formed in accordance with the prescrived treatment. COPYRIGHT: (C)1999,JPO

Gallium nitride compound semiconductor laser diode

An Al 0.15 Ga 0.85 N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2 . At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al 0.15 Ga 0.85 N layer 2 . Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate 1 is exposed).

Shiro Yamazaki

Papers

Light emitting semiconductor device using gallium nitride group compound

Light emitting element of gallium nitride compound semiconductor

Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer

Gallium nitride compound semiconductor laser diode

Method for manufacturing a gallium nitride group compound semiconductor