Statistics for Spatial Data.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Humidity measurement is one of the most significant issues in various areas of applications such as instrumentation, automated systems, agriculture, climatology and GIS. Numerous sorts of humidity sensors fabricated and developed for industrial and laboratory applications are reviewed and presented in this article. The survey frequently concentrates on the RH sensors based upon their organic and inorganic functional materials, e.g., porous ceramics (semiconductors), polymers, ceramic/polymer and electrolytes, as well as conduction mechanism and fabrication technologies. A significant aim of this review is to provide a distinct categorization pursuant to state of the art humidity sensor types, principles of work, sensing substances, transduction mechanisms, and production technologies. Furthermore, performance characteristics of the different humidity sensors such as electrical and statistical data will be detailed and gives an added value to the report. By comparison of overall prospects of the sensors it was revealed that there are still drawbacks as to efficiency of sensing elements and conduction values. The flexibility offered by thick film and thin film processes either in the preparation of materials or in the choice of shape and size of the sensor structure provides advantages over other technologies. These ceramic sensors show faster response than other types.

/pdf/humidity-sensors-principle-mechanism-and-fabrication-q8mq7scozc.pdf

Humidity Sensors Principle, Mechanism, and Fabrication Technologies: A Comprehensive Review

https://www.repository.cam.ac.uk/bitstream/1810/264501/1/Fu_et_al-2017-Progress_in_Material_Science-VoR.pdf

Advances in piezoelectric thin films for acoustic biosensors, acoustofluidics and lab-on-chip applications

MEMS Mechanical Sensors

This paper presents a novel fully implantable wireless sensor system intended for long-term monitoring of hypertension patients, designed for implantation into the femoral artery with computed tomography angiography. It consists of a pressure sensor and a telemetric unit, which is wirelessly connected to an extracorporeal readout station for energy supply and data recording. The system measures intraarterial pressure at a sampling rate of 30 Hz and an accuracy of ±1.0 mmHg over a range of 30-300 mmHg, while consuming up to 300 μW. A special peel-away sheath introducer set was developed to support the implantation procedure. The system delivered stable measurements in initial animal trials in sheep, with results being in good agreement with reference sensor systems.

A Novel Fully Implantable Wireless Sensor System for Monitoring Hypertension Patients

A CMOS technology in silicon on insulator (SOI) for VLSI applications is presented. The insulator is a buried silicon nitride formed by nitrogen implantation and annealing. The CMOS devices are fabricated in the superficial monocrystalline silicon layer without an epitaxial process, 1-µm PMOS and 2-µm NMOS transistors have been realized, which have been used to built inverters, ring Oscillators, and other circuits. With 40-nm gate oxide the transistors withstand gate and drain voltages of 10 V. Mobilities, subthreshold behavior, and leakage currents are nearly the same as in bulk-CMOS devices. Ring-oscillator measurements yield inverter delay times of 230 ps and power delay products of 14 fJ.

CMOS on buried nitride&#8212;A VLSI SOI technology

An integrated power switch structure comprises a lateral MOS transistor (3) and a lateral or vertical thyristor (2). The drain-source path of the lateral MOS transistor (3) is in series with the cathode-anode path of the thyristor (2). In order to ensure that the power switch structure reliably switches on and off with great dielectric strength and low switch-on resistance, at least the source electrode of the lateral MOS transistor (3) is insulated against the substrate (7) by means of a buried oxide layer (8) in accordance with the present invention.

Integrated power switch structure having a vertical thyristor controlled by a lateral MOS transistor

In this work a theoretical concept and simulations are presented for a novel lateral drift-field photodetector pixel to be fabricated in a 0.35 μm CMOS process. The proposed pixel consists of a specially designed n-well with a non-uniform lateral doping profile that follows a square-root spatial dependence. “Buried" MOS capacitor-based collection-gate, a transfer-gate, and an n-type MOSFET source/drain n+ floating-diffusion serve to realize a non-destructive readout. The pixel readout is performed using an in-pixel source-follower pixel buffer configuration followed by an output amplifier featuring correlated double-sampling. The concentration gradient formed in the n-well employs a single extra implantation step in the 0.35 μm CMOS process mentioned and requires only a single extra mask. It generates an electrostatic potential gradient, i.e. a lateral drift-field, in the photoactive area of the pixel which enables high charge transfer speed and low image-lag. According to the simulation results presented, charge transfer times of less than 3 ns are to be expected.

Lateral drift-field photodiode for low noise, high-speed, large photoactive-area CMOS imaging applications

A flow sensor component consists of a diaphragm of monocrystalline silicon, the diaphragm having arranged therein filled slots which are filled with a thermally insulating material and which penetrate the diaphragm from a first main surface to a second main surface thereof. The filled slots defining at least one heating area of the diaphragm provided with at least one heating element and at least one detection area of the diaphragm provided with at least one temperature detection element, the filled slots thermally insulating the heating area and the detection area from one another and surrounding the heating area and the detection area completely.

Holger Vogt

Papers

A Novel Fully Implantable Wireless Sensor System for Monitoring Hypertension Patients

CMOS on buried nitride—A VLSI SOI technology

Integrated power switch structure having a vertical thyristor controlled by a lateral MOS transistor

Lateral drift-field photodiode for low noise, high-speed, large photoactive-area CMOS imaging applications

Flow sensor component

Holger Vogt

Papers

A Novel Fully Implantable Wireless Sensor System for Monitoring Hypertension Patients

CMOS on buried nitride&#8212;A VLSI SOI technology

Integrated power switch structure having a vertical thyristor controlled by a lateral MOS transistor

Lateral drift-field photodiode for low noise, high-speed, large photoactive-area CMOS imaging applications

Flow sensor component

CMOS on buried nitride—A VLSI SOI technology