H
Honglin Li
Researcher at Chongqing Normal University
Publications - 7
Citations - 34
Honglin Li is an academic researcher from Chongqing Normal University. The author has contributed to research in topics: Schottky barrier & Schottky diode. The author has an hindex of 3, co-authored 7 publications receiving 21 citations.
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Journal ArticleDOI
Tuning the band alignment of p-type graphene-AsSb Schottky contact by electric field
TL;DR: In this paper, a series of theoretic calculations are performed to survey the effects of interlayer coupling and the band realignment of graphene-AsSb heterointerface and reveal that intrinsic p-type Schottky barriers of 0.184 and 0.381 eV are formed for the two types of configurations.
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Comparative Study of Blue Phosphorus-MoTe 2 /WTe 2 van der Waals Heterostructures on Electronic Structures and Band Realignment
Honglin Li,Dongmei Li,Haijun Luo +2 more
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The band alignments modulation of g-MoTe 2 /WTe 2 van der Waals heterostructures
TL;DR: In this paper, the structural, electronic, and corresponding variational characteristics of the graphene(g)-MoTe2/WTe2 heterointerfaces are studied in detail based on ab initio calculations with nonlocal van der Waals (vdW) corrections.
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The modulation of Schottky contacts of p-type graphene-GeC/GeS heterointerface
Honglin Li,Yuting Cui,Haijun Luo +2 more
TL;DR: In this article, two intrinsic p-type contacts of graphene-GeC/GeS and further tune them from p-Type to n-type by external electric fields are presented.